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1、Effective-masstheoryofmetal-semiconductorcontactresistivityWalterA.Harrison,AndreasGoebel,andPaulA.CliftonCitation:AppliedPhysicsLetters103,081605(2013);doi:10.1063/1.4818265Viewonline:http://dx.doi.org/10.1063/1.4818265ViewTableofContents:http://scitation.aip.org/con
2、tent/aip/journal/apl/103/8?ver=pdfcovPublishedbytheAIPPublishingThisarticleiscopyrightedasindicatedinthearticle.ReuseofAIPcontentissubjecttothetermsat:http://scitation.aip.org/termsconditions.DownloadedtoIP:222.178.10.244On:Thu,02Jan201404:18:49APPLIEDPHYSICSLETTERS10
3、3,081605(2013)Effective-masstheoryofmetal-semiconductorcontactresistivity1,2,a)11WalterA.Harrison,AndreasGoebel,andPaulA.Clifton1AcornTechnologies,Inc.,PaloAlto,California94306,USA2DepartmentofAppliedPhysics,StanfordUniversity,Stanford,California94305,USA(Received4Jun
4、e2013;accepted23July2013;publishedonline20August2013)Wehavecalculatedthecontactresistivityforametal-siliconinterface,usinganaccurateapplicationofeffective-masstheorythatincludestunnelingandquantumreflection.Wefoundthatearliertreatmentsmissedanincreaseinresistivityofafa
5、ctoroftenduetothemismatchofthewavefunctionsattheinterface,notincludedintheWKBapproximation.Thisarisesineffective-masstheoryforallmetal-semiconductorinterfaces.Wecarriedoutfullnumericalcalculationsoftheinterfaceresistivityanddescribeapproximationswhichleadtoexplicitfor
6、mulaeforthecurrentflow,allowingonetoseethedependenceoftheresistivityondoping,Schottky-barrierheight,temperature,crystalorientation,andchoiceofmetal.Finally,weseehowthenumberandenergydistributionoftransmittedcarrierschangesasafunctionofdopingdensity.VC2013AIPPublishingL
7、LC.[http://dx.doi.org/10.1063/1.4818265]ðSchottkybarriersatmetal-semiconductorinterfaceshave12LAe@ekbeeninvestigatedsinceearlyon1,2andarestillanareaofJ¼3dkk2pdk?Að2pÞhL@kk3activeandbroadscientificinvestigation.Technologically,the@f0½ðekþe?eFÞ=kTshrinkingareaofthemeta
8、l-semiconductorcontactsinsiliconTrðek;e?ÞDV:(1)@eFCMOSintegratedcircuitsdrivestheneedforalowerspecific4contactresistivityqc.
