欢迎来到天天文库
浏览记录
ID:33677590
大小:14.30 MB
页数:46页
时间:2019-02-28
《基于a-igzo薄膜材料的柔性半导体器件-(10347)》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库。
1、万方数据山东大学硕士学位论文为柔性衬底,然后在表面制作TFT器件。完成后泡入丙酮溶液使PMMA溶解,以PI为衬底的器件漂浮在丙酮溶液里。经过尝试并且成功制作几个微米量级的超薄柔性器件,使其可以粘附在任何柔性材料上工作,漂浮前后性能基本不变,表明这种方式制作柔性器件是成功的。关键词:铟镓锌氧化物;薄膜晶体管:柔性PI万方数据山东大学硕士学位论文ABSTRACTTheworld’Selectronicindustrydevelopfast,SOtheelectroniccomponentsindustrywhichisthe
2、foundationofelectronicinformationindustryalsodevelopveryfast.Duetothekeyroleinthedisplay,thethinfilmtransistor(TFT)hastraditionallybeenthelaboratoryandtheresearchemphasisoftheenterprise.However,withthedevelopmentofthesociety,thetraditionalsemiconductordevicescan'
3、tadapttothenewrequirements,suchasshapeextendable,flexibleandtransparent.inthiscase,theflexiblesemiconductordevicesgetmoreandmorepeople’Sattention.Forflexiblesemiconductordevice,theselectionofsubstrateisthekey.Aftercomprehensiveliteratureresearch,thispaperchosekap
4、ton(PI)fromtheseveralkindsofthemostcommonandmostwidelyapplicationofflexiblesubstratematerials.ThePIispeeledonthesurfaceofsiliconwhichiscoatedwithalayerof30011111silicondioxideandcalledsiliconforshort.Comprehensiveconsideringtheperformanceofthedeviceandthestabilit
5、yofthetest,thispaperchosethebottomgateandtopcontactasthestructureofTFT.Thispaperchosetheamorphousindiumgalliumzincoxide(a-IGZO)astheactivelayer.Themostimportantreasonisthatithashighmobility,highstability,easypreparation,highlighttransmittanceandlowtemperaturemade
6、.Becausethesampleneedstobebent,insulationlayerchoosethecoatedPIsolutiontoreplacetraditionalSi02andSi3N4material.Intheprocessofpreparationofflexiblea—IGZOTFT.whichbychangingthemetalelectrodesandincreasingbufferlayerbetweentheinsulationPIandactivelayer,graduallycre
7、atedtheTFTdeviceswhichhavecertaincharacteristics.ThenthedevicechosedifferentannealingtemperatureandtestID-VDand10-VGcurve,selectingthebestannealingtemperatureis2000Catlast.ThoughadjustingtheIGZOfilmthicknesstochangetheperformanceofthedevice,whichfind90Wj3min,pure
8、Ar(20sccm)casesthathasthebestperformance.Againbyimprovingbufferlayertogetthemostexcellentdevice,whichmakeitsmigrationrateof3.49cm2/Vs,thethresholdswingof3.45V/
此文档下载收益归作者所有