基于a-igzo薄膜材料的柔性半导体器件

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1、万方数据山东大学硕士学位论文为柔性衬底，然后在表面制作TFT器件。完成后泡入丙酮溶液使PMMA溶解，以PI为衬底的器件漂浮在丙酮溶液里。经过尝试并且成功制作几个微米量级的超薄柔性器件，使其可以粘附在任何柔性材料上工作，漂浮前后性能基本不变，表明这种方式制作柔性器件是成功的。关键词：铟镓锌氧化物；薄膜晶体管：柔性PI万方数据山东大学硕士学位论文ABSTRACTTheworld’Selectronicindustrydevelopfast，SOtheelectroniccomponentsindustrywhichisthefoundationofelectronicinfo

2、rmationindustryalsodevelopveryfast．Duetothekeyroleinthedisplay,thethinfilmtransistor(TFT)hastraditionallybeenthelaboratoryandtheresearchemphasisoftheenterprise．However,withthedevelopmentofthesociety,thetraditionalsemiconductordevicescan'tadapttothenewrequirements，suchasshapeextendable，fle

3、xibleandtransparent．inthiscase，theflexiblesemiconductordevicesgetmoreandmorepeople’Sattention．Forflexiblesemiconductordevice，theselectionofsubstrateisthekey．Aftercomprehensiveliteratureresearch，thispaperchosekapton(PI)fromtheseveralkindsofthemostcommonandmostwidelyapplicationofflexiblesub

4、stratematerials．ThePIispeeledonthesurfaceofsiliconwhichiscoatedwithalayerof30011111silicondioxideandcalledsiliconforshort．Comprehensiveconsideringtheperformanceofthedeviceandthestabilityofthetest,thispaperchosethebottomgateandtopcontactasthestructureofTFT．Thispaperchosetheamorphousindiumg

5、alliumzincoxide(a-IGZO)astheactivelayer．Themostimportantreasonisthatithashighmobility,highstability,easypreparation，highlighttransmittanceandlowtemperaturemade．Becausethesampleneedstobebent，insulationlayerchoosethecoatedPIsolutiontoreplacetraditionalSi02andSi3N4material．Intheprocessofprep

6、arationofflexiblea—IGZOTFT．whichbychangingthemetalelectrodesandincreasingbufferlayerbetweentheinsulationPIandactivelayer，graduallycreatedtheTFTdeviceswhichhavecertaincharacteristics．ThenthedevicechosedifferentannealingtemperatureandtestID-VDand10-VGcurve，selectingthebestannealingtemperatu

7、reis2000Catlast．ThoughadjustingtheIGZOfilmthicknesstochangetheperformanceofthedevice，whichfind90Wj3min，pureAr(20sccm)casesthathasthebestperformance．Againbyimprovingbufferlayertogetthemostexcellentdevice，whichmakeitsmigrationrateof3．49cm2／Vs，thethresholdswingof3．45V／