溅镀法制备薄膜操作条件之探讨.docx

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1、濺鍍法製備薄膜操作條件之探討主講人：洪錕銘國立高雄應用科技大學化學工程系中華民國九十三年4月26日﹝星期一﹞1.SummaryofsputteringconditionsemployedforthepreparationofPbTiO3thinfilms:TargetPbTiO3powderwith5wt.﹪excessPbOGaspressure（1.2~2.4）×10-2TorrGascompositionAr/O2（100/0~50/50）R.f.powerdensity2~4Wcm-2S

2、ubstratetemperature300~650℃Substrate-to-targetdistance70mmTargetdiameter50mm一、SangsubKim,SunggiBaik,”DepositionandcharacterizationofPbTiO3thinfilmsgrownbyradiofrequencysputteringonMgO（100）”,ThinSolidFilms266（1995）205-211（1）Gaspressure↑Depositionrate

3、↑α↓α＝I（001）×2［I（001）×2＋I（100）］1.4-2.2nm/min（2）OxygenContent↑Depositionrate↓α↓（3）R.f.powerdensity↑X-rayintensityof（001）＋（100）↓1（4）XRDspectra:T＜400℃-------------------amorphousT＝600℃and650℃-----ighlyc-axisoriented二、SangsubKim,YoungminKang,SunggiBaik,”G

4、rowthofPbTiO3thinfilmsbyr.f.sputteringonvicinalMgO（100）substrates”,ThinSolidFilms256（1995）240-2462.SummaryofsputteringconditionsemployedforthepreparationofPbTiO3thinTargetPbTiO3powderwith5wt.﹪excessPbOGaspressure1.2×10-2TorrGascompositionPureArR.f.po

5、werdensity2Wcm-2Substratetemperature600℃Substrate-to-targetdistance70mm2.Thebestqualityfilmswereobtainedunderthefollowingconditions:Gaspressure1.2×10-2TorrGascompositionAr/O2＝90/10R.f.powerdensity2Wcm-2Substratetemperature600℃1.MgOwafersweremiscutfr

6、omanMgOsingle-crystalof5.5°tothe（100）planeasFig.1.:3.Fig.2.showshighlypreferredcaxisorientedwiththeiraaxesneartheMgO（100）axis:24.ThewidthsofrockingcurvesshowthatthecrystallinequalityofthePbTiO3thinfilmonthevicinalsubstrateissuperiortothatontheexactsu

7、bstrate.三、ShoichiMochizuki,ToshiyukinMihara,ShigeharuTamura,TadashiIshida,”CrystalstructureanddepositionrateofPbTiO3filmspreparedonglassandplatinumsubstratebyrfsputtering”,AppliedSurfaceScience169-170（2001）557-5591.DepositionconditionsofthePbTiO3fil

8、m:TargetPb：Ti＝1：1Gaspressure0.7-7Pa（0.5~5×10-2Torr）GascompositionAr：O2＝1：1R.f.powerMaximum300WSubstratetemperatureMaximum610℃Filmthickness0.5-3μm2.Theeffectofsubstrate:Platinum-coatedglasssubstrate------PerovskitephasePbTiO3wasobtainedGlasssubstrate