三星DDR3 DRAM产品系列.pdf

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1、Dec.2012DDR3SDRAMMemoryProductGuideSAMSUNGELECTRONICSRESERVESTHERIGHTTOCHANGEPRODUCTS,INFORMATIONANDSPECIFICATIONSWITHOUTNOTICE.Productsandspecificationsdiscussedhereinareforreferencepurposesonly.Allinformationdiscussedhereinisprovidedonan"ASIS"basis,withoutwarrantiesofanykind.Thisdocumentandal

2、linformationdiscussedhereinremainthesoleandexclusivepropertyofSamsungElectronics.Nolicenseofanypatent,copyright,maskwork,trademarkoranyotherintellectualpropertyrightisgrantedbyonepartytotheotherpartyunderthisdocument,byimplication,estoppelorother-wise.Samsungproductsarenotintendedforuseinlifesu

3、pport,criticalcare,medical,safetyequipment,orsimilarapplicationswhereproductfailurecouldresultinlossoflifeorpersonalorphysicalharm,oranymilitaryordefenseapplication,oranygovernmentalprocurementtowhichspecialtermsorprovisionsmayapply.ForupdatesoradditionalinformationaboutSamsungproducts,contacty

4、ournearestSamsungoffice.Allbrandnames,trademarksandregisteredtrademarksbelongtotheirrespectiveowners.ⓒ2012SamsungElectronicsCo.,Ltd.Allrightsreserved.-1-Dec.2012ProductGuideDDR3SDRAMMemory1.DDR3SDRAMMEMORYORDERINGINFORMATION123456789101112131415K4BXXXXXXX-XXXXSAMSUNGMemorySpeedDRAMTemp&PowerDRA

5、MTypePackageTypeDensityRevisionBitOrganizationInterface(VDD,VDDQ)#ofInternalBanks1.SAMSUNGMemory:K10.RevisionM:1stGen.A:2ndGen.2.DRAM:4B:3rdGen.C:4thGen.D:5thGen.3.DRAMTypeE:6thGen.F:7thGen.B:DDR3SDRAMG:8thGen.H:9thGen.4~5.Density51:512Mb11."-"1G:1Gb2G:2Gb12.PackageType4G:4GbH:FBGA(Halogen-free

6、&Lead-free)8G:8GbM:FBGA(Halogen-free&Lead-free,DDP)AG:16GbB:FBGA(Halogen-free&Lead-free,FlipChip)E:FBGA(Lead-free&Halogen-free,QDP)6~7.BitOrganizationO:FBGA(Lead-free&Halogen-free,QDPfor64GB04:x4LRDIMM)08:x816:x1613.Temp&Power33:x32C:CommercialTemp.(0C~85C)&NormalPower(1.5V)Y:CommercialTemp.(

7、0C~85C)&LowVDD(1.35V)8.#ofInternalBanksK:CommercialTemp.(0C~85C)&LowVDD(1.35V)3:4Banks&RS(ReducedStandby)4:8Banks5:16Banks14~15.SpeedF7:DDR3-800(400MHz@CL=6,tRCD=6,tRP=6)9.Interface(VDD,VDDQ)F8:DDR3-1066(533MHz@CL=7,tRCD=7,tRP