认识Mask以及其制作流程.ppt

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1、认识Mask以及简要的制作流程TMTheRoleofMaskinICIndustryDESIGNMASKWAFERTESTINGASSEMBLYHowDoesMaskWorkinWaferFAB-------StepperHowDoesMaskWorkinWaferFAB-------ScannerRawMaterialofMaskBlankBIM(binarymask)PSM(phaseshiftmask)A.KRF-PSMB.ARF-PSMSizeofBlank5inch90mil(5009)5inch180mil(5018)6inch120mil(6012)6i

2、nch250mil(6025)7inch250mil(7015)WhatkindofmaskSMICFABsuse?BlankComponentBinaryBlankPSMBlankPhotoResist(3K,4K,4650A)CrO&Chrome(~1050A,700A)QuartzPhotoResist(2K,3K,4KA)CrO&Chrome(1000,~550A)QuartzMoSiFilmPhotoResistOpaqueMetalFilmSubstratePhotoResistOpaqueMetalFilmPhaseShiftLayerSubstrate

3、BlankQzCharacteristicRigidityHeatExpansion(ppm/oC)MaterialSodaliteSilicon-BorideQuartzRigidity540657615MaterialSodalimeSilicon-BorideQuartzCoefficient9.43.70.5BlankQzCharacteristicOpticsCharacterTransmission(%)200300400020406080100QuartzSilicon-BorideSodaLimeWaveLength(nm)That’swhywecho

4、oseQuartzasthesubstrateofblankHowtoTransferDesigntoMask?WriterProcessMetrologyVis-InspectClean/MountAIMSRepair1stInspectThr-InspectSTARlightShippingDevelopStripEtchFront-endProcessBlankconfigurationPhoto-resistCrfilmQuartzExposurePhoto-resistdevelopWetetchPhoto-resiststripAEIASIRe-Etch?

5、AEI:AfterEtchCDmeasureASI:AfterStripCDmeasureStep1Step2Step3Step4Step6Step5Step7Front-endProcessDryprocessResistCrQzH+H+H+H+H+H+H+EBEBEBH+H+H+H+H+H+H+Exposure(EB1,EB2,EB3DUV,LB5,LB6)PEB(PostExposureBake)SFB2500,APB5500PAGAcidgenerationAciddiffusionDeprotectionreactionDevelopment(SFD25

6、00,ASP5500)H+DryEtch(Gen3,Gen4)AEI,Re-etchStrip,ASIPellicleComponentPellicleMembraneMaterialWaveLengthN.C.365nm(I-line)C.E.365,248nm(I-line,DUV)F.C.193nm(ArF)Frame(AluminumAlloy)AdhesiveTapePellicleMembrane(2~5um)PellicleFrameDoubleSideAdhesiveTapeCrGlassWhatPellicleDo?TopContaminantOb

7、jectPlanePellicleFilmBottomContaminantContaminantonPatternPlaneLenSystemUnfocusedTopContaminantImageUnfocusedBottomContaminantImageImagePlaneFocusedContaminantImageonWaferMaskPatternWaferSurfaceLightParticleImmunityControlParticlesize(D)V.S.MinimumStand-off(T)T=(4M/N.A.)DM----M