双腔室分子束外延复合体在ⅲ-ⅴ族和ⅱ-ⅵ族半导体异质结生长中的应用

《双腔室分子束外延复合体在ⅲ-ⅴ族和ⅱ-ⅵ族半导体异质结生长中的应用》由会员上传分享，免费在线阅读，更多相关内容在学术论文-天天文库。

1、团‘jInt塑堕塑堕Inu：型遣墨茎：双腔室分子束外延复合体在川一V族和lI_Vl族半导体异质结生长中的应用A．Alexeev，D．Baranov，S．Petrov，I．Sedovaz，S．Sorokin(1．SemiTEqJSC；2．IoffePhysicalTechnicalInstituteofRAS)摘要：半导体光电子学是当前科技发展最快的一个领域，光电子器件的增长需要加强新材料技术的研究与开发，III—V族和II．IV族纳米结构生长的双腔室分子束外延复合体是目前-7--艺设备一个最好的例子，可以解决长期以来纳米光子学和纳米电子学的问题关键词：分子束外延；III．V族

2、和II—VI族半导体；设备与技术中图分类号：TN304．053文献标i,q~i-q：B文章编号：1004—4507(2010)10-0023-03ApplicationoftwogrowthchamberMBEcomplexforhybridIII—VandII—VIsemiconductorheterostructuresgrowingA．AlexeevD．Baranov，S．Petrov，I．Sedova，S．Sorokin(1．SemiTEqJSC；2．IoffePhysicalTechnicalInstituteofRAS)Abstract：Semiconductor

3、optoelectronicsisoneofthemostquicklydevelopingfieldsofscienceandtechnology．Increasingrequirementsforoptoelectronicdevicesstimulateresearchanddevelopmentofnewmaterials’technology．Oneofthebestexamplesofmodemtechnologicalequipment—two—growthchamberMBEcomplexforhybridIII．．VandII．IVnanoheterostr

4、ucturesgrowingallowstosolvelong-termnanophotonics’andnanoelectronics’problems．Keywords：MolecularBeamEpitaxy；III．VandII—VIsemiconductor；equipmentandtechnologyMaterialsandMethodsfull—coloropticaldisplays，pico—projectorscompatiblewithmobilephonesandlaptopsystems，laserprojec—tiontelevision，all—

5、weathernavigationandradarsys—Theappearanceofthecommercialcompactsemiconductorlasersemittinginthegreenspectrumtems，high—qualitycolorprintingdevicesandetc．range(500～550nm)willopennewpossibilitiesforNoveltyandurgencyofthisthemeareconfirmedbytheabsenceofsemiconductorlaserswithoperatingcreatingo

6、pticaldevicesofthenewgeneration，suchas收稿日期：20100905：⋯⋯造⋯一茎：电子釜亟工业专墨用设备矗■j爱i目jwavelengthinthegreenspectralrangeonthedomes—TheprototypeofSTE3526MBEcomplexforII-ticandworldmarkets．TodaytheonlytechnologicalI—VandII—VInanoheterostructuresgrowth(Fig．11waspossibilityofoverlappingthegreenspectralra

7、ngebycreatedin”SemiconductorTechnologiesandEquip—low-thresholdlaserscouldbeachievedbywidegapI—ment”JointStockCompany(SemiTEqJgC)andto—I一ⅣsemiconductorsapplicationfJl．Inthiscase．todayisoperatedinIofePhysicalTechnicalinstituteofobtainlow．defectdensityII—IV