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2、BZhangetal2010NewJ.Phys.12083058-Topologicalfield-effectquantumtransistorsinHgTenanoribbonsHua-HuaFu,Jin-HuaGaoandKai-LunYaoViewthearticleonlineforupdatesandenhancements.Recentcitations-Bulkandinterfacequantumstatesofelectronsinmulti-layerheterostructureswithtopologicalmaterialsAleksan
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4、fPhysicsTheopen–accessjournalforphysicsQuantumtunnelingthroughplanarp–njunctionsinHgTequantumwellsLBZhang1,KaiChang1,4,XCXie2,HBuhmann3andLWMolenkamp31SKLSM,InstituteofSemiconductors,ChineseAcademyofSciences,POBox912,Beijing100083,People’sRepublicofChina2DepartmentofPhysics,OklahomaSta
5、teUniversity,Stillwater,OK74078,USA3PhysikalischesInstitut(EP3),UniversitatWuerzburg,AmHubland,D-97074Wuerzburg,GermanyE-mail:kchang@red.semi.ac.cnNewJournalofPhysics12(2010)083058(10pp)Received3May2010Published27August2010Onlineathttp://www.njp.org/doi:10.1088/1367-2630/12/8/083058Abs
6、tract.Wedemonstratethatap–njunctioncreatedelectricallyinHgTequantumwellswithinvertedbandstructureexhibitsinterestingintrabandandinterbandtunnelingprocesses.Wefindaperfectintrabandtransmissionforelectronsinjectedperpendicularlytotheinterfaceofthep–njunction.Theopacityandtransparencyofele
7、ctronsthroughthep–njunctioncanbetunedbychangingtheincidenceangle,theFermienergyandthestrengthoftheRashbaspin–orbitinteraction(RSOI).Theoccurrenceofaconductanceplateauduetotheformationoftopologicaledgestatesinaquasi-one-dimensional(Q1D)p–njunctioncanbeswitchedonandoffbytuningthegatevo
