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《旋涂水溶液前驱体制备氧化锌薄膜及其性质.pdf》由会员上传分享,免费在线阅读,更多相关内容在行业资料-天天文库。
1、物理化学学报(WuliHuaxueXuebao)JulyActaPhys.一Chim.Sin.,2010,26(7):2049—20522049[Article】www.whxb.pku.edu.cn旋涂水溶液前驱体制备氧化锌薄膜及其性质王小燕董桂芳乔娟段炼王立铎邱勇(清华大学化学系,有机光电子与分子工程教育部重点实验室,北京100084)摘要:通过旋涂法,采用Zn(OAc)·2HO和聚环氧乙烷(PEO)的水溶液为前驱体在不同的热处理温度下制备了ZnO薄膜.PEO的加入增加了溶液的成膜性,其较低的热分解温度有利于制得纯净的ZnO薄膜.文中考察了在不同热处理温度下制备的ZnO薄膜的形貌、结晶性、
2、带隙(丘)以及电导性.原子力显微镜(AF1VI)~试表明在热处理温度为400、450和500℃制备的ZnO薄膜的粗糙度均方根值分别为3.3、2.7和3.6am.采用透射电子显微镜(TEM)测试发现ZnO薄膜中含有大量纳晶粒子.通过测试ZnO薄膜的uV—Vis吸收光谱,根据薄膜位于373am处的吸收带边计算得到ZnO的带隙为3.3eV.通过对薄膜的电流一电压(,-曲线的测试计算得到在热处理温度为400、450和500℃制备的ZnO薄膜的电阻率分别为3.3X109,2.7x10和6.6x10n·cm.450℃时制备的ZnO薄膜的电阻率最小,主要是由于较高的热处理温度有利于提高薄膜的纯度、密度和吸附
3、氧.而纯度较高、密度较大的薄膜电阻率比较/b;吸附氧含量增加,晶界势垒增大,电阻率增大.因此在纯度和吸附氧的双重作用下450℃时制备的ZnO薄膜的电阻率最小,而500℃时制备的ZnO薄膜的电阻率最大.关键词:氧化锌;溶液处理;水溶液;带隙;电导性中图分类号:0649PreparationandPropertiesofZincOxideFilmsbySpin-CoatingWaterSolutionPrecursorWANGXiao—YanDONGGui—FangQIAOJuanDUANLianWANGLi—DuoQIUYong(KeyLaboratoryofOrganicOptoelectro
4、nicsandMolecularEngineeringofMinistryofEducation,DepartmentofChemistry,TsinghuaUniversity,Beqing100084,PR.China)Abstract:WesuccessfullypreparedZnOthinfilmsthroughspin—coatingamixtureofzincacetatedihydrate,poly(ethyleneoxide)(PEO)anddeionizedH2O.SmoothandpureZnOthinfilmswereobtainedbyusingPEO,because
5、ofitslowthermaldecompositiontemperature.Themorphology,crystallinity,bandgapenergy(),andconductivityoftheZnOthinfilmsannealedatdifferenttemperaturesweredetermined.Atomicforcemicroscopy(AFM)showedthattherootmeansquare(rms)surfaceroughnessoffilmsannealedat400,450,and500℃was3.3,2.7,and3.6nm,respectively
6、.TEMimagesshowedthattheZnOfilmswerecomposedofZnOnanocrystals.Thebandgapenergy(forthefilmswascalculatedas3.3eVfromtheabsorptionedgeat373nm.Fromtheircurrent-voltage(I-curvestheresistivitiesofZnOthinfilmsannealedat400,450,and500℃werecalculatedas3.3x10。,2.7x10,and6.6x10Q·cm,respectively.Highannealingtem
7、peratureisusefulinimprovingpurityanddensityofthefilmandincreasingadsorbedoxygenonthefilm.Thefilmwithhighpurityanddensitywillexhibitlowresistivity.Thefilmwithmoreadsorbedoxygenwillexhibithighresistivit
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