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1、一维纳米材料论文：一维碳化硅纳米材料的制备、表征及性能研究【中文摘要】碳化硅(SiC)半导体材料具有禁带宽度大、击穿电场高、热稳定性好、热导率和饱和电子漂移速度大等特点,使其在高温、高频、强辐射、大功率等条件下具有良好的性能。而一维SiC纳米材料由于独特的形貌和结构特征,使其具有一些奇特的物理和化学性能,在纳米电子器件、纳米光电子器件、纳米场发射器件、纳米复合材料、催化等方面具有广泛的应用前景。因此,一维SiC纳米材料的制备及性能研究具有重要的意义。本文选用不同的碳源与硅源,采用碳热【英文摘要】Siliconcarbide(SiC)possesseswidebandga
2、p,highbreakdownelectricfield,excellentthermalstability,highthermalconductivityandhighelectronsaturationdraftingvelocity,andthesecharacteristicsmakeSiCexcellentpropertiesinhightemperature,highfrequency,highradiationandhighpowerenvironment.Fortheiruniquemorphologiesandstructure,one-dimensi
3、onalsiliconcarbidenanomaterialshavespecialphysicalandchemicalproperties,andhavewiderangeofapplicationsinelectronicnanodevices,field-emissionnanodevices,nanocomposites,catalysis,andsoon.Therefore,thepreparationandpropertiesresearchofone-dimensionalsiliconcarbidenanomaterialshasconsiderabl
4、esignificance.Inthispaper,SiCnanowireshavebeenpreparedviacarbothermalreductionmethodusingdifferentcarbonsourceandsiliconsource,andthelarge-scalepreparationtechnologyofSiCnanowiresalsohasbeenstudied.Thecompositions,morphologiesandmicrostructureoftheproductswerecharacterizedbyX-raypowderdi
5、ffraction,scanningelectronmicrosopy,transmissionelectronmicrosopyandselectedareaelectronicdiffraction;theopticalproperties,energybandgapstructureandoxidationresistancewerecharacterizedbyFouriertransforminfraredspectroscopy,fluorescencephotometer,UV-Visspectroscopyandthermalanalysisinstru
6、ments.Onthebasisofaboveinvestigation,thegrowthmechanismandthefactorsthataffectedthegrowthofSiCnanowireshavebeenanalyzed;thethermalstabilityandrelationshipsbetweenthestructureandpropertiesalsohavebeenstudied.Themainconclusionsarelistedasfollows:Firstly,SiCnanowireshavebeensynthesizedviaca
7、rbothermalreductionmethodbyusingtetraethoxysilaneandcarbonblackasmainrawmaterials,andthenanalyzedthegrowthmechanismandthefactorsthataffectedthegrowthofSiCnanowiresandachievedeffectivemorphologiescontrolofSiCnanowires.ThemorphologiesofSiCnanowireswereaffectedbySi/C,tempera
