pztpnnpzn四元系压电陶瓷的低温烧结与性能研究

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1、Then,inordertogettingspecimenwhichhaveexcellentelectricalpropertiesinalowsinteringtenperature,aamountofCuOwasaddedintoPZT-PNN-PZNquaternarypiezoelectricceramics.TheexperimentalresultsshowthattheaddofCuOdidnotchangethemaincrystalstructure,andcouldclearlyimprovedensity.Wh

2、enlmol%CuOwasaddedintospecimen,thepiezoelectricconstant(J33,relativedielectricconstantdielectriclosstan8ofspecimenwhichwassinteredat950Cfor4hareasfollows:d33=41lpc/N,£；/wo=2449,tan§=1.86%.ThemethodofaddedCuOcanlowerthesinteringtenperatureofPZl^PNN-PZNquaternarypiezoelec

3、tricceramics,atthesametimehavebetterelectricalproperties.Finally,Low-temperaturesinteringof(a-x)Pb(Zro48Tio.52)03-bPb(Nii/3Nb2/3)O3-CPb(Zni/3Nb2^)O3-xPb(Fe2/3Wia)O3(a+b+c+x=l,0.06

4、electricmaterialsPb(Fe2/3Wi/3)C)3(PFW)asasinteringaid.TheeffectsofPFWcontentonthethedensification,microstructure,phasestructure,dielectricandpiezoelectricpropertiesoftheceramicswereinvestigated.Thesinteringteriperaturewasreducedfrom1180C(withoutPFWaddition)to940Cwhenthe

5、materialwasPFW-doped.PFW-dopingincreasedthesintereddensityandtheaveragegrainsizeofPFW-PNN-PZN-PZTceramics.Theceramicssinteredat940Cfor4hwithx=0.08exhibitedfavorableproperties,whichwerelistedasfollows:d33=496pC/N,eT33/so=3119,tan8=2.1%andlc=242C.Thesevaluesindicatedthatt

6、henewlydevelopedcompositionmightbesuitableformultilayerpiezoelectricdevicesapplication.KEYWORDS:Low-temperaturesintering,piezoelectricceramics,PZT-PNN-PZN,liquidphase^*5I■'匕11・1研究背景及意义11・2低温烧结技术11.2.1改变配方11.2.2改进工艺21.3液相烧结41.4含铅压电陶瓷71.4.1压电陶瓷的软性掺杂和硬性掺杂71.4.2低温烧结压电陶瓷的研究现

7、状91.4.3低温压电陶瓷的应用141・5课题的提出及研究内容14第二章实验过程与测试162.1实验原料及仪器162.2工艺流程172.3性能测试18第三章通过改变化学计量比降低PNN-PZN-PZT烧结温度203.1弓I口203.2不同PbQ含量对PNN-PZN-PZT四元系压电陶瓷性能的影响203.2.1不同PbQ含量对一定Ni过量的PNN-PZN-PZT四元系压电陶瓷性能的影响203.2.2不同Pb：O含量对一定Ni、Zn过量的PNN-PZN-PZT四元系压电陶瓷性能的影响233.3工艺对PNN-PZN-PZT四元系压电陶瓷性能

8、的影响263.3.1烧结工艺对一定Ni过量的PNN-PZN-PZT四元系压电陶瓷性能的影响•••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••26