低温烧结制备pzt压电陶瓷与其性能-研究

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1、广东工业大学硕士学位论文d33=397，而掺杂量为O．8吼％时，介电损耗最小：tan6=1．3％。关键词：PZT；低温制备；Ce02掺杂；性能研究AbstractPiezoelectricmaterials，whichcaJlconvenmechaJlicalene唱yandelectricalene培y，haVebeenwidelyusedinVariouselectroniccomponemsanddevices．Forexanlpleresonators，sensors，unrasonictr

2、ansducers，actuators，buzzers，electronicignitiondeVicesandsoon．PZTpiezoelectricceramicshavebeenaJlimpona芏1tstationinthepiezoelectricceraInicsfieldbecauseoftheirexcellentelectricproperties．Buttheirhighsintertemperaturemakeleadoxide10ssedVeryseriousi11sint

3、eringprocess，whichresultindenectingstoichiometricproportion，deterioratingtheelectricpropertiesandpoUutingtheenViroment．Intoda【y’sadVocatelowcarbonenViro埘1entalprotection，t11rou曲thelowtemperaturesmer证gteclulologytoreducethevolatilizationofleadoxideismor

4、eauldmoreimportamandnecessary．PZTwithacomPostiionofPb(Zro．52Tio．48)03，whichisnearthemo印hotropicphaseboundyar(MPB)wasselectedinthepresentstudy．ConlbinedwiththeadvantagesanddisadVantagesofthetraditionalsolidphasesintering，thepreparationofPZTpiezoelectric

5、ceramics，bychangillgtheconVentionaloxiderawmaterials，innoVatiVeputforwardtwonewmethodsoflowtemperatureprep2urationofPZTpiezoelectricceramics．Ismainlystudiedbyleadacetate，zirconiummetatitanicacid，carbonicacidandoxalicaCidastherawmaterialoflowtemperature

6、preparationtechnology，discussthemillingtime，Zr／Tiratio，presinter证gtemperatureandf-maltemperatureoff-ourfactorsinnuencethisprocess．ByanalyzillgtheTG-D1’A，XRD，SEMaIldelectricpropertiesofsanlples，thebetterprocessconditions、ⅣeredetellninedunderZr／Ti=0．40／0

7、．60，griIldmg12h，750℃forthe2hburnillg，eVentuallyburn2hunder950℃，thepreparationoftherelativepermittiVityofPZTcera血csandthepiezoelectriccoemciemsformaximum：：￡r=824，tan6=0．986％，d33=372pC／N．Researchhassho、Ⅳnthatthisnewmethodise虢ctiveforpreparingPZTpiezoelec

8、triccer锄ics，andelectricpropeniesofsanlplesslightlyhigherthallthetraditionalsolidp11asemethodtogett11eperformanceofthePZTpiezoelectricceramics，andlowcost，siIllpleprocess，lowsneringtemperature，haSindustrial印plicationValue，isagreatdeVelopm