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1、Straineffectinsilicon-on-insulatormaterials:InvestigationwithopticalphononsJ.Camassel,L.A.Falkovsky∗andN.PlanesGrouped’EtudesdesSemiconducteursUMR5650CNRS-UM2,cc074Universite´Montpellier2PlaceE.BataillonF-34095Montpelliercedex5,France(June1,2018)AbstractWer
2、eportadetailedexperimentalandtheoreticalinvestigationoftheeffectofresidualstrain,andstrainrelaxation,whichmanifestsitselfattheSi/SiO2interfacesincommercialsilicon-on-insulator(SOI)wafers.SOImaterialismadeofasingle-crystalsiliconoverlayer(SOL)ontopofaninsula
3、tor(buriedSiO2layer)sittingonahandlesiliconwafer.InfraredreflectivityspectrashowthattheburiedSiO2layerrelaxescontinuouslywhenthinningtheSOL.AtthesametimetheSOLsurfaceroughnessandthelinewidthofopticalphononsinSineartheSi/SiO2interface(probedbymicro-Ramanspec
4、roscopy)increase.Intheas-deliveredwafers,thiscomesfromaslightexpansionofSionbothsidesoftheburiedSiO2layerwhich,conversely,iscompressed.ThinningarXiv:cond-mat/0009459v1[cond-mat.mtrl-sci]29Sep2000theSOLmodifiestheseinitialequilibriumconditions.Togetquantitat
5、iveresults,wehavemodeledallourRamanspectrausingatheoryofinhomo-geneousshiftandbroadeningforopticalphonons,whichtakesintoaccountthephononinteractionwiththestaticstrainfluctuations.Fromthevariationoflinewidthversusinterfacedistance,wehavefoundthatthemeansquar
6、ed1straincontinuestorelaxinthebulkofthewaferthroughadepthontheorderofseveralµm.WealsoshowthattheSOLsurfaceroughnessisrelatedtostrainfluctuationsneartheSi/SiO2interfaces.63.20Mt,78.30.-j,79.60JvTypesetusingREVTEX2I.INTRODUCTIONSilicon-On-Insulator(SOI)techno
7、logyemergedintheearly80sandbecameincreasinglypopular[1],[2].Initiallylimitedtospaceandmilitaryapplicationswhereradiationhardnessismoreimportantthancostandperformance,SOImaterialwasrapidlyconsideredforPD(PartiallyDepleted)andFD(FullyDepleted)C-MOS(Complemen
8、tary-MetalOxideSemiconductor)technology.ThenetconsequenceisthatIBMannouncedrecentlymass-productionofICs(IntegratedCircuits)onSOIusingPD-MOSarchitectures[3].ThemainreasonforsuccessinthecaseofICsonSOIisthatunli
