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1、Letterpubs.acs.org/NanoLettHigh-ContrastElectroopticModulationofaPhotonicCrystalNanocavitybyElectricalGatingofGraphene††‡⊥††§XuetaoGan,Ren-JyeShiue,YuandaGao,KinFaiMak,XinwenYao,LuozhouLi,AttilaSzep,§‡†,⊥,†,∥DennisWalker,Jr.,JamesHone,TonyF.Heinz,andDirkEnglund*†Departmentof
2、ElectricalEngineering,ColumbiaUniversity,NewYork,NewYork10027,UnitedStates‡DepartmentofMechanicalEngineering,ColumbiaUniversity,NewYork,NewYork10027,UnitedStates⊥DepartmentofPhysics,ColumbiaUniversity,NewYork,NewYork10027,UnitedStates§AirForceResearchLaboratory,SensorsDirect
3、orate,WPAFB,Dayton,Ohio45433,UnitedStates∥DepartmentofAppliedPhysicsandAppliedMathematics,ColumbiaUniversity,NewYork,NewYork10027,UnitedStates*SSupportingInformationABSTRACT:Wedemonstratehigh-contrastelectro-opticmodulationofaphotoniccrystalnanocavityintegratedwithanelectric
4、allygatedmonolayergraphene.Asiliconair-slotnanocavityprovidesstrongoverlapbetweentheresonantopticalfieldandgraphene.TuningtheFermienergyofthegraphenelayerto0.85eVenablesstrongcontrolofitsopticalconductivityattelecomwavelengths,whichallowsmodulationofcavityreflectioninexcessof1
5、0dBforaswingvoltageofonly1.5V.Thecavityresonanceat1570nmisfoundtoundergoashiftinwavelengthofnearly2nm,togetherwitha3-foldincreaseinqualityfactor.Theseobservationsenableacavity-enhanceddeterminationofgraphene’scomplexopticalsheetconductivityatdifferentdopinglevels.Oursimpledev
6、icedemonstratesthefeasibilityofhigh-contrast,low-power,andfrequency-selectiveelectro-opticmodulatorsingraphene-integratedsiliconphotonicintegratedcircuits.KEYWORDS:Graphene,optoelectronics,electro-opticmodulation,photoniccrystalcavityraphene’sunusualopticalpropertiesenablear
7、angeofAsshownschematicallyinFigure1a,theexperimentaldevice1−6Gpromisingoptoelectronicapplications.Toenhancetheconsistsofanair-suspendedPPCnanocavitythatiscoupledtolight-matterinteractioninthissingleatomiclayermaterial,agraphenefield-effecttransistor(FET)gatedbyasolid18,19graph
8、enehasbeenintegratedintoopticalwaveguidesandelectrolyte.Theopticaltransmiss
