An investigation of surface states

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1、Solid-StateElectronicsPergamonPress1962.Vol.5,pp.285-299.PrintedinGreatBritainANINVESTIGATIONOFSURFACESTATESATASILICON/SILICONOXIDEINTERFACEEMPLOYINGMETAL-OXIDE-SILICONDIODES*tL.M.TJZRMANI.B.M.YorktownHeights,NewYork(Received16October1961;inrevisedform8Fe

2、bruary1962)Abstract-Anewsolid-statedevice,theM-O-Sdiode,ofwhichanoxidizedsiliconsurfaceisanintegralpart,isintroduced,andatheoryforitsoperationintheabsenceofsurfacestatesisobtained.Thecapacitanceofthisdevicemaybeconsiderablymorevoltagesensitivethanthatofap

3、-njunction.Theexistenceofsurfacestateswithnon-zerorelaxationtimesisintroducedintothetheoreticalmodel.Itisshownthatthestatesmayincreasethecapacitanceofthedevice,aswellasaffecttheproportionofappliedvoltagewhichappearsacrossthesilicon.Asmall-signalequivalent

4、circuitisderivedwhichincludestheeffectofthesurfacestates.Itisalsoshownthatacomparisonofthetheoreticalcapacitancevs.voltagecurvewithoutstatesandameasuredhigh-frequencycapacitancevs.voltagecurvemaybeusedtoobtainthedistributionofallstates,regardlessoftheirti

5、meconstants.ResultsaregivenofmeasurementsandcalculationsontwoM-O-Sdiodeshavingdifferentsurfacetreatmentsbeforeoxidation.Bothsurfaceshaveatotaldensityofabout3x1012states/cm2.Inbothcases,thedistributionofstatesiscontinuousandhasitshighestpeakabout100mVabove

6、&(O),thepositionoftheFermilevelatthesiliconsurfaceifthereisnovoltagedropacrossthesiliconThetimeconstantsofthestatesextendfromlo-*settolongerthan10m2sec.Thereisatendencyforstateslocatedatdeeperenergylevelstohavelongertimeconstants,butsomeofthestatesinthehi

7、ghdensityofstatesaboveE&O)havelongtimeconstants.Thedistributionoftimeconstantswithenergylevelissomewhatdifferentforthetwosurfaces.Acomparisonismadebetweenthedistributionofstatesobtainedherewiththedistributionreportedbyothersworkinginthefield.Theresultsare

8、similarindensityandlocationofthepeaksofthedistributionreportedhere,butdifferinthatsomeothersourcesreportadiscretedistribution.RBsumB-Onintroduitunnouvelelement?Il’etatsolide,ladiodeM-O-S,dontlasurfaceausiliciumoxyde