Effects of direct solvent exposure on the nanoscale morphologies and electrical characteristics of PCBM-based transistors and photovoltaics

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1、ViewArticleOnline/JournalHomepage/TableofContentsforthisissueJournalofDynamicArticleLinksC

2、-basedtransistorsandphotovoltaicsSoojiNam,JaeyoungJang,HyojungCha,JihunHwang,TaeKyuAn,SeonukParkandChanEonPark*Received17thOctober2011,Accepted6thJanuary2012DOI:10.1039/c2jm15260fWeinvestigatedtheeffectsofdirectsolventexposureonthepropertiesof[6,6]-phenyl-C61-

3、butyricacidmethylester(PCBM)filmsandpoly(3-hexylthiophene)(P3HT)/PCBMblendfilmsemployedasactivelayersin,respectively,organicfield-effecttransistors(OFETs)andorganicphotovoltaics(OPVs).Thecrystallinity,morphology,andOFETcharacteristicsofthePCBMthinfilmsweresignifica

4、ntlyinfluencedbydirectexposuretosolvent,especiallytoselectalcohols.ControloverthenanoscalemorphologyofthePCBMfilm,achievedviadirectsolventexposure,yieldedhighlyefficientpoly-(3-hexylthiophene)(P3HT)/PCBMOPVswithashort-circuitcurrentdensityof10.2mAcm
2,anopen-circ

5、uitvoltageof0.64V,andapowerconversionefficiencyof3.25%underAM1.5illuminationwithalightintensityof100mWcm
2.TheseresultsindicatedthatoptimalphaseseparationintheP3HT/PCBMfilmscouldbeobtainedsimplybyexposingtheactivelayerfilmsforafewsecondstosolvent.1.Introductionse

6、miconductorstogeneratebothdonor-andacceptor-liketraps,whichsignificantlydegradethemobility.14PreviousInrecentyears,organicfield-effecttransistors(OFETs)andbulkreportshaveattemptedtoprotectdevicesfromtheeffectsofheterojunction(BHJ)organicphotovoltaics(OPVs)havewa

7、terandoxygenbyintroducingpassivationlayersontopofreceivedconsiderableattentionduetotheirpotentialapplica-theorganicsemiconductor.Alternatively,top-gateOFETs(intionsinlowcost,easilyprocessable,flexible,large-areaelectronicwhichtheorganicsemiconductorisencapsulat

8、edbythegatedevices.1–5Atpresent,manyresearchgroupshaveendeavoredtoDownloadedbyZhejiangUniversityon25February2013dielectricandthegateelectrode)orinvertedOPVs(inwhichobtainhigh-perfo