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1、46IEEETransacTIonsonUlTrasonIcs,FErroElEcTrIcs,andFrEqUEncyconTrol,vol.57,no.1,JanUary2010TheoreticalAnalysisofSAWPropagationCharacteristicsin(100)OrientedAlN/DiamondStructureruyenro,SeniorMember,IEEE,yuan-Fengchiang,chia-chisung,ruyuelee,andseanWu,Member,IEEEAbstract—Inthi
2、sstudy,thefiniteelementmethodisem-highphasevelocity.diamondisanattractivesubstrateployedtocalculateSAWcharacteristicsin(100)AlN/diamondforfabricatingsaWdevicesbecauseithasthehighestbasedstructureswithdifferentelectricalinterfaces;i.e.,IDT/acousticwavevelocityamongallmateria
3、ls.However,itAlN/diamond,AlN/IDT/diamond,IDT/AlN/thinmetalfilm/diamond,andthinmetalfilm/AlN/IDT/diamond.Theeffectsisanon-piezoelectricmaterialand,hence,theuseofdia-ofCuandAlelectrodesaswellasthethicknessofelectrodemondasasubstratefordesigningsaWdevicesrequiresaonphaseveloci
4、ty,couplingcoefficient,andreflectivityofSAWspiezoelectriclayertoinducesaWs.Becausealnhastheareillustrated.PropagationcharacteristicsofSAWsin(002)highestacousticvelocityamongallpiezoelectricmaterials,AlN/diamond-basedstructuresarealsopresentedforcompari-largecouplingcoeffici
5、ent,andgoodtemperaturestability,son.SimulationresultsshowthattoretainalargereflectivityforthedesignofRFfiltersandduplexers,theCuIDT/(100)depositingalnfilmsondiamondmaybethemostprom-AlN/diamondstructurepossessesthehighestphasevelocityisingcandidateforapiezoelectriclayeredstr
6、uctureforandlargestcouplingcoefficientatthesmallestAlNfilmthick-saWdevicesinthesuper-high-frequencyband[6]–[11].ness-to-wavelengthratio.recently,(100)alnfilmshavebeendepositedondifferentsubstratesincludingglass,al2o3,anddiamond[12]–[14].Followingtheapproachproposedbycampbel
7、landJonesI.Introduction[15],[16]orthematrixmethoddevelopedbyadler[17],phasevelocityandcouplingcoefficientofsaWsinaln/TheuseoflayeredstructurestofabricatesaWdevicesdiamondstructurescanbeevaluated.resultsindicatewithahigherphasevelocity,alargercouplingcoef-thatthemaximumcoupl
8、ingcoefficientisobservedintheficient,oralowertemperaturecoefficientofdelay(Tcd)sec
