半导体导论翻译

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1、半导体导论P124-125CHAPTER3TheSemiconductorinEquilibrium(d)T=400K,Nd=0,Na=1014cm-3(e)T=500K,Nd=1014cm-3,Na=03.37Repeatproblem3.36forGaAs.3.38Assumethatsilicon,germanium,andgalliumarsenideeachhavedopantconcentrationsofNd=1X1013cm-3andNa=2.5x1014cm-3atT=300K.Foreachofthethreematerials

2、(a)Isthismaterialntypeorptype?(b)Calculaten0andp0.3.39AsampleofsiliconatT=450Kisdopedwithboronataconcentration0f1.5x1015cm-3andwitharsenicataconcentrationof8X1014cm-3.(a)Isthematerialntypeorptype?(b)Determinetheelectronandholeconcentrations.(c)Calculatethetotalionizedimpurityc

3、oncentration.3.40ThethermalequilibriumholeconcentrationinsiliconatT=300Kisp0=2x1015cm-3.Determinethethermal-equilibriumelectronconcentration.Isthematerialntypeorptype?3.41InasampleofGaAsatT=200K,wehaveexperimentallydeterminedthatn0=5p0andthatNa=0.Calculaten0,p0,andNd.3.42Consi

4、derasampleofsilicondopedatNd=1014cm-3andNa=0Calcu1atethemajority-carrierconcentrationat(a)T=300K,(b)T=350K,(C)T=400K(d)T=450K,and(e)T=500K.3.43ConsiderasampleofsilicondopedatNd=0andNa=1014cm-3.Plotthemajority-carrierconcentrationversustemperatureovertherange200≤T≤500K.3.44Thet

5、emperatureofasampleofsiliconisT=300KandtheacceptordopingconcentrationisNa=0.Plottheminority-carrierconcentration(onalog-logplot)versusNdovertherange1015≤Nd≤1018cm-3.3.45Repeatproblem3.44forGaAs.3.46AparticularsemiconductormaterialisdopedatNd=2x1013cm-3,Na=0,andtheintrinsiccarr

6、ierconcentrationisni=2x1013cm-3.Assumecompleteionization.Determinethethermal-equilibriummajority-andminority-carrierconcentrations.3.47(a)SiliconatT=300Kisuniformlydopedwitharsenicatomsataconcentrationof2x1016cm-3andboronatomsataconcentrationof1x1013cm-3.Determinethethermal-eq

7、uilibriumconcentrationsofmajorityandminoritycarriers.(b)Repeatpart(a)iftheimpurityconcentrationsare2x1015cm-3phosphorusatomsand3x1016cm-3boronatoms.3.48InsiliconatT=300K,wehaveexperimentallyfoundthatn0=4.5x104cm-3andNd=5x1015cm-3.(a)Isthematerialntypeorptype?(b)Determinethemaj

8、orityandminority-carrierconcentrations.(c)Whattypesandconcent