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1、IntroductiontoFlashMemoryROBERTOBEZ,EMILIOCAMERLENGHI,ALBERTOMODELLI,ANDANGELOVISCONTIInvitedPaperThemostrelevantphenomenonofthispastdecadeinthefieldtoallowcellscalingbelowthe65-nmnodeisthetunneloxideofsemiconductormemorieshasbeentheexplosivegrowthofthethickne
2、ssreduction,astunnelthinningislimitedbyintrinsicandFlashmemorymarket,drivenbycellularphonesandothertypesextrinsicmechanisms.ofelectronicportableequipment(palmtop,mobilePC,mp3audioplayer,digitalcamera,andsoon).Moreover,inthecomingyears,Keywords—Flashevolution,F
3、lashmemory,Flashtechnology,portablesystemswilldemandevenmorenonvolatilememories,ei-floating-gateMOSFET,multilevel,nonvolatilememory,NORcell,therwithhighdensityandveryhighwritingthroughputfordatascaling.storageapplicationorwithfastrandomaccessforcodeexecutionin
4、place.Thestrongconsolidatedknow-how(morethantenyearsofexperience),theflexibility,andthecostmaketheFlashmemoryaI.INTRODUCTIONlargelyutilized,well-consolidated,andmaturetechnologyformostofthenonvolatilememoryapplications.Today,Flashsalesrepre-Thesemiconductormar
5、ket,forthelongterm,hasbeensentaconsiderableamountoftheoverallsemiconductormarket.continuouslyincreasing,evenifwithsomevalleysandAlthoughinthepastdifferenttypesofFlashcellsandarchitec-peaks,andthisgrowingtrendisexpectedtocontinueinthetureshavebeenproposed,today
6、twoofthemcanbeconsideredascomingyears(seeFig.1).Alargeamountofthismarket,industrystandard:thecommongroundNORFlash,thatduetoitsabout20%,isgivenbythesemiconductormemories,whichversatilityisaddressingboththecodeanddatastoragesegments,andtheNANDFlash,optimizedfort
7、hedatastoragemarket.aredividedintothefollowingtwobranches,bothbasedonThispaperwillmainlyfocusonthedevelopmentoftheNORFlashthecomplementarymetal–oxide–semiconductor(CMOS)memorytechnology,withtheaimofdescribingboththebasicfunc-technology(seeFig.2).tionalityofthe
8、memorycellusedsofarandthemaincellarchitec-–Thevolatilememories,likeSRAMorDRAM,thattureconsolidatedtoday.TheNORcellisbasicallyafloating-gateMOStransistor,programmedbychannelhotelect
