半导体PVD金属化

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1、Metalization--PVD2014.08.181WHATISSPUTTERING?macroscopicmicroscopicDefinition:Todislodge(atoms)fromthesurfaceofmaterialsbycollisionwithhighenergyparticles;also,todepositbysuchafilm.(accordingtoWebster’sdictionary)SchematicofDCsputtering-powerArAr+Ar+

2、Ar+SchematicofDCsputtering-powerAr+Ar+Ar+AlAlAlArAlSchematicofDCsputtering-powerAr+Ar+Ar+ArAlAlAlAlMagnetronSputtering•StrongmagnetisplacedunderthematerialstobedepositedthusproduceamagneticfieldinadditiontotheDCelectricalfield;•UndertheLorentzforce,Ho

3、ppingelectrosistrappedneartothetargetthusenhancedtheionizationefficiency.•Advantage:–highdepositionrate~1m/minforAl,(10timeshigher)–reducingelectronbombardmentofSub.–extendingtheoperatingvacuumrangeReactivesputtering-sputteringmetallictargetinthepres

4、enceofareactivegas-eq).mixedwithingas(Ar)oxides–Al2O3,SiO2,Ta2O5(O2)nitrides–TaN,TiN,Si3N4(N2,NH3)carbides–TiC,WC,SiC(CH4,C2H4,C3H8)A:compoundsB:doping,alloysA:allNreactswithTafilm2dopedmetal(e.g.TaN0.01)atomicratioofNtoTaincreasesasN2pressureincrea

5、seB:Compoundformationanthemetaltarget,plasmaimpedanceisAeffectivelylowerinstateBthaninstateA,sinceion-inducedsecondaryelectronBemissionismuchhigherforcompoundsthanformetals.SputterYieldEjected_Atoms(molecules)SIncident_ionS:typically0.01~4;Periodical

6、lychangewithatomicmassandradius;AccordingtothecollisioncascadetheorybySigmund34MMES121(E1KeV)214(MM)E12b3.56ZZMS(E)S121n(E1KeV)2211MMEZ3Z312b12*:ameasureoftheefficiencyofmomentumtransferincollisionSn(E):stoppingpower-ameasureoftheen

7、ergylossperunitlengthduetonuclearcollision2007/7/27Noblemetalhashighersputteringyield;SputteringprocessvariablesWhatwecareaboutthesputtering?KeyindexoffilmRecipe/equipmentparametersResistivityPressureResistivityNUVacuum;WemusttoThicknessNUbuildabridge

8、Heatertemp,Sub.gasflow;Particleshere!PowerEtchingcapabilitiesCoolingrate;Micro-structureTarget-subspacingStressTargetgrainsize/purity;Reflectivity2ndphase/textureoftargetStoichiometryTargetlifetimeStepcoverageShield/magnet/partsassemblyMorphol