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1、SurfacechannelclockedantibloomingtechniqueforareaarrayCCDimagesensorsw.D.Washkurak,S.J.Strunk,S.G.Chamberlain,J.R.F.McMackenDALSAINC.605McMurrayRoad,Waterloo,Ontario,CANADA,N2V-2E9ABSTRACTImplementationofover-illuminationprotectiononareaarrayimagesensorshastypicallyinvolvedsi
2、gnificantmodificationstodevicedesignand/orprocessing.Thesemodificationshavecauseddegradationofdeviceperformance,forexample,lateralantibloomingreducesfillfactorandverticalantibloomingreducesnearinfra-red(NIR)quantumefficiency(QE).Clockedantibloomingisatechniquethatdoesnotrequi
3、reanyprocessingordesignchangesanddoesnotdegradefillfactororMRQE.Thetechniqueinvolvesclockingtheimagingphasesinto,andoutof,inversionduringtheintegrationtimeandrelyingonthesurfacerecombinationofelectronsandholestoeliminateexcesssignalcharge.Thetechniquedescribedinthispaperallow
4、sclockedantibloomingwithsurfacechanneloperationthuspermittinglargefullwellpacketswithsmallpixelgeometries.Althoughsurfacechanneloperationislessefficientintermsofchargetransferefficiency,therearesomeapplicationswheremaximumfullwellchargestoragecapabilityisimportant.1.INTRODUCT
5、IONAntibloominginimagesensorarraysprotectsnon-saturatedimageregionsfrombeingcontaminatedbyoverflowchargeduetolocalizedoverilluminationofanadjacentimageregion.Toperformantiblooming,excesssignalchargeelectronsareeliminated,preventingthemfromoverflowingintoadjacentpixelsites.Ant
6、ibloomingisnecessaryinapplicationswithawiderangeofilluminationintensities,forexample,imaginghighlyreflectivesurfacesandimagingobjectssimultaneouslywithbrightlightsources.Thispaperreviewspreviousmethodsofantibloominganddescribesamodifiedmethodbasedonrecombinationwhichallowssur
7、facechanneloperationforenhancedfullwellcapacity.Theoryofoperation,simulationsandmeasurementsarepresented.Theantibloomingmethodwassuccessfullyimplementedona256x256areaimagesensorCCDarray.[1]2.ANTIBLOOMINGMETHODSInthissectionthreeantibloomingmethodsarediscussed:lateral,vertical
8、andsurfacerecombination.Thesemethodsarecommonlyfoundinimagesensorsav