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1、Fluxgrowthinahorizontalcon guration:ananaloguetovaportransportgrowthJ.-Q.Yan,1,B.C.Sales,1M.A.Susner,1,2,3andM.A.McGuire11MaterialsScienceandTechnologyDivision,OakRidgeNationalLaboratory,OakRidge,Tennessee37831,USA2AerospaceSystemsDirectorate,AirForceResearchLaborat
2、ory1950FifthSt.,Building18,Wright-PattersonAirForceBase,OH45433USA3UES,Inc.4401DaytonXeniaRd.Beavercreek,OH45432USA(Dated:June9,2017)Fluxgrowthofsinglecrystalsisnormallyperformedinaverticalcon gurationwithanuprightrefractorycontainerholdingthe
uxmelt.Athightemperatur
3、es,
uxdissolvesthechargeformingahomogeneoussolutionbeforenucleationandgrowthofcrystalstakeplaceunderpropersuper-saturationgeneratedbycoolingorevaporatingthe
ux.Inthiswork,wereport
uxgrowthinahorizontalcon gurationwithatemperaturegradientalongthehorizontalaxis:aliquid
4、transportgrowthanalogoustothevaportransporttechnique.Inatypicalliquidtransportgrowth,thechargeiskeptatthehotendoftherefractorycontainerandthe
uxmeltdissolvesthechargeandtransfersittothecoldend.Oncetheconcentrationofchargeisabovethesolubilitylimitatthecoldend,thetherm
5、odynamicallystablephasenucleatesandgrows.Comparedtothevertical
uxgrowth,theliquidtransportgrowthcanprovidealargequantityofcrystalsinasinglegrowthsincethecharge/
uxratioisnotlimitedbythesolubilitylimitatthegrowthtemperature.Thistechniqueiscomplementarytothevertical
ux
6、growthandcanbeconsideredwhenalargeamountofcrystalsareneededbuttheyieldfromtheconventionalvertical
uxgrowthislimited.WeappliedthistechniquetothegrowthofIrSb3,Mo3Sb7,MnBifromself
ux,andthegrowthofFeSe,CrTe3,NiPSe3,FePSe3,andInCuP2S6fromahalide
ux.I.Introductiontionalve
7、rtical
uxgrowthandcanbeemployedwhenalargeamountofcrystalsareneededforsomespecialmeasurementsbuttheyieldfromtheconventionalverti-Fluxgrowthisacompellingmethodforthediscoverycal
uxgrowthislimited.Weshowthegrowthdetailsofnewmaterialsandforthegrowthofcrystalsforsci-1{6us
8、ingthistechniqueofIrSb3,Mo3Sb7,andMnBioutofenti cstudiesaswellastechnologicalapplications.Inself
ux,FeSe,CrTe3,NiPSe3,FePSe3,andInC
