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1、804IEEETRANSACTIONSONPLASMASCIENCE,VOL.34,NO.3,JUNE2006ElectronTransportPhenomenainPlasmaDevicesWithEBDriftMichaelKeidar,SeniorMember,IEEE,andIsakI.Beilis,SeniorMember,IEEEInvitedPaperAbstract—Areviewofplasmadevicesinvolvingelectrondriftintheelectrontransport,letusfirstbriefly
2、reviewvariousapplica-crossedelectricandmagneticfields(drift)andelectrontionoftheplasmadischargewithclosedelectrondrift.transportphenomenaispresented.Therearetwoimportantpe-culiaritiesofsystem:possibilitytomaintainalargeelec-II.DEVICESWITHCLOSEDELECTRONDRIFTtricfieldinaquasi-ne
3、utralplasmawhichallowstransportofrel-ativelylargeintensitybeamofchargedparticleandanefficientInthissection,wedescribeseveralsystemsbasedonimpactionizationduetoclosedelectrondrift.Severaltechnolog-drift.Themainattentionwillbepaidtotheirapplication,spe-icalapplicationsofdevices
4、basedonelectrondriftinfieldcificconditionsandimportantissuesrelatedtounderstandingareunderdevelopment,includingplasmaimmersionionimplanta-theunderlyingphysicalphenomena.tion,energeticdepositionofmaterials,magnetronsputtering,andplasmapropulsion.Despiteverydifferentapplications
5、,theunder-A.PlasmaImmersionIonImplantationliningphysicsofoperationofthesedevicesisverysimilar.OneoftheimportantphysicalphenomenaistheelectrontransportacrossTheimplantationofhighlyenergeticionsisfoundtobeanamagneticfield.Experimentalandtheoreticalstudyrevealsthatefficienttechno
6、logytoolformodificationofmaterialsurfaceselectronsundergoanomaloustransportandseveralpossiblemech-[1].Ionimplantationisusedtoinjectionstodepthsofhundredsanismsareproposedandstudiedpreviously.AnomalouselectrontransportmechanismssuchasBohmdiffusionandnear-wallcon-uptothousandso
7、fAngstromsbelowthesurfacethatformsductivityarereviewedandassessedfortwodevices,namelynonequilibriumstructurethatisdifficultorevenimpossibletomagnetronandHallthruster.Amodifiedmodelofthenear-wallforminotherways.Forinstance,ionimplantationisusedasconductivitythattakesintoaccount
8、varioussheatheffectsisde-ameansofdopingthesemiconductorelementsofintegrated
