Qiao et al_2014_High-mobility transport anisotropy and linear dichroism in few-layer black

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1、ARTICLEReceived27Feb2014

2、Accepted20Jun2014

3、Published21Jul2014DOI:10.1038/ncomms5475OPENHigh-mobilitytransportanisotropyandlineardichroisminfew-layerblackphosphorusJingsiQiao1,2,*,XianghuaKong1,2,*,Zhi-XinHu1,2,FengYang1,2,3&WeiJi1,2Two-dimensionalcrystal

4、sareemergingmaterialsfornanoelectronics.Developmentofthefieldrequirescandidatesystemswithbothahighcarriermobilityand,incontrasttographene,asufficientlylargeelectronicbandgap.Herewepresentadetailedtheoreticalinvestigationoftheatomicandelectronicstructureoff

5、ew-layerblackphosphorus(BP)topredictitselectricalandopticalproperties.Thissystemhasadirectbandgap,tunablefrom1.51eVforamonolayerto0.59eVforafive-layersample.Wepredictthatthemobilitiesarehole-dominated,ratherhighandhighlyanisotropic.Themonolayerisexception

6、alinhavinganextremelyhighholemobility(oforder10,000cm2V1s1)andanomalouselasticpropertieswhichreversetheanisotropy.Lightabsorptionspectraindicatelineardichroismbetweenperpendicularin-planedirections,whichallowsopticaldeterminationofthecrystallineorienta

7、tionandopticalactivationoftheanisotropictransportproperties.Theseresultsmakefew-layerBPapromisingcandidateforfutureelectronics.1DepartmentofPhysics,RenminUniversityofChina,Beijing100872,China.2BeijingKeyLaboratoryofOptoelectronicFunctionalMaterials&Micro

8、-nanoDevices,RenminUniversityofChina,Beijing100872,China.3CollegeofPhysicsandElectronicEngineering,InstituteofSolidStatePhysics,SichuanNormalUniversity,Chengdu610068,China.*Theseauthorscontributedequallytothiswork.Correspondenceandrequestsformaterialssho

9、uldbeaddressedtoW.J.(email:wji@ruc.edu.cn).NATURECOMMUNICATIONS

10、5:4475

11、DOI:10.1038/ncomms5475

12、www.nature.com/naturecommunications1&2014MacmillanPublishersLimited.Allrightsreserved.ARTICLENATURECOMMUNICATIONS

13、DOI:10.1038/ncomms5475hediscoveryofgraphenelai

14、dthefoundationsfordemonstratethatfew-layerBPisanewcategoryof2Dmanynewareasofresearch.OneofthemostsemiconductorwithhighpotentialfornovelapplicationsinTimportantfoundationistheintensiveinvestigationofnanoelectronicsandoptoel