资源描述：
《Electrical transport and persistent photoconductivity in monolayer MoS2 phototransistors》由会员上传分享，免费在线阅读，更多相关内容在学术论文-天天文库。
1、ElectricaltransportandpersistentphotoconductivityinmonolayerMoS2phototransistorsAntonioDiBartolomeo1,2,*,LucaGenovese1,3,TobiasFoller3,FilippoGiubileo2,GiuseppeLuongo1,2,LucaCroin4,Shi-JunLiang5,L.K.Ang5,andMarikaSchleberger31DipartimentodiFisica“E.R.Caianiaello”,UniversitàdiSalerno,viaGiovann
2、iPaoloII,Fisciano,84084,Italy.2CNR-SPINSalerno,viaGiovanniPaoloII,Fisciano,84084,Italy3FakultätfürPhysikandCENIDE,UniversitätDuisburg-Essen,Lotharstrasse1,47057,Duisburg,Germany4INRIM-StradadelleCacce,91-10135Torino,Italy5EngineeringProductDevelopment(EPD),SingaporeUniversityofTechnologyandDes
3、ign(SUTD),8SomapahRoad,487372,Singapore*Correspondingauthor.E-mail:adibartolomeo@unisa.itKeywords:Two-dimensionalmaterials,molybdenumdisulfide(MoS2),phototransistor,persistentphotoconductivity,chargetrapping,photogating,spacechargelimitedconduction.AbstractWestudyelectricaltransportpropertiesi
4、nexfoliatedmolybdenumdisulfide(MoS2)back-gatedfieldeffecttransistorsatlowdrainbiasandunderdifferentilluminationintensities.Itisfoundthatphotoconductiveandphotogatingeffectaswellasspacechargelimitedconductioncansimultaneouslyoccur.Wepointoutthatthephotoconductivityincreaseslogarithmicallywithth
5、elightintensityandcanpersistwithadecaytimelongerthan104s,duetophoto-chargetrappingattheMoS2/SiO2interfaceandinMoS2defects.Thetransfercharacteristicspresenthysteresisthatisenhancedbyillumination.Atlowdrainbias,thedevicesfeaturelowcontactresistanceof1.4�Ω/��,ONcurrentashighas1.25��/��,105ON-OFFr
6、atio,mobilityof~1��2/��andphotoresponsivityℛ≈1��.IntroductionMolybdenumdisulfide(MoS2)fieldeffecttransistors(FETs)haverecentlybecomeverypopularasalternativestographenedevicesforanewgenerationoftransistorsbasedonatomically-thin2Dmaterials[1-4].Indeed,monolayerMoS2hasadirectbandgapof~1.8−1.9��[5
7、],whichenablesthefabricationoftransistorswithON/OFFratioexceeding108[6-7],thatissuitableforlogicapplicationsandnon-achievablewithgaplessgraphene.Unfortunately,thesuccessofMoS2basedtransistorshasbeenhinderedsofarbythelowmobility,whichisi
