PMOS管技术资料AO3401

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1、July2001AO3401P-ChannelEnhancementModeFieldEffectTransistorGeneralDescriptionFeaturesTheAO3401usesadvancedtrenchtechnologytoVDS(V)=-30VprovideexcellentRDS(ON),lowgatechargeandID=-4.2Aoperationwithgatevoltagesaslowas2.5V.ThisRDS(ON)<50mΩ(VGS=-10V)deviceissuitablefor

2、useasaloadswitchorinPWMRDS(ON)<65mΩ(VGS=-4.5V)applications.RDS(ON)<120mΩ(VGS=-2.5V)DTO-236(SOT-23)TopViewGDGSSAbsoluteMaximumRatingsTA=25°CunlessotherwisenotedParameterSymbolMaximumUnitsDrain-SourceVoltageVDS-30VGate-SourceVoltageVGS±12VContinuousDrainTA=25°C-4.2Cu

3、rrentAT=70°CI-3.5AADBIPulsedDrainCurrentDM-30TA=25°C1.4PDWAT=70°CPowerDissipationA1JunctionandStorageTemperatureRangeTJ,TSTG-55to150°CThermalCharacteristicsParameterSymbolTypMaxUnitsAt≤10sMaximumJunction-to-Ambient6590°C/WARθJAMaximumJunction-to-AmbientSteady-State

4、85125°C/WCSteady-StateR°C/WMaximumJunction-to-LeadθJL4360Alpha&OmegaSemiconductor,Ltd.AO3401ElectricalCharacteristics(TJ=25°Cunlessotherwisenoted)SymbolParameterConditionsMinTypMaxUnitsSTATICPARAMETERSBVDSSDrain-SourceBreakdownVoltageID=-250µA,VGS=0V-30VVDS=-24V,VG

5、S=0V-1IDSSZeroGateVoltageDrainCurrentµATJ=55°C-5IGSSGate-BodyleakagecurrentVDS=0V,VGS=±12V±100nAVGS(th)GateThresholdVoltageVDS=VGSID=-250µA-0.7-1-1.3VID(ON)OnstatedraincurrentVGS=-4.5V,VDS=-5V-25AVGS=-10V,ID=-4.2A4250mΩTJ=125°C75RDS(ON)StaticDrain-SourceOn-Resistan

6、ceVGS=-4.5V,ID=-4A5365mΩVGS=-2.5V,ID=-1A80120mΩgFSForwardTransconductanceVDS=-5V,ID=-5A711SVSDDiodeForwardVoltageIS=-1A,VGS=0V-0.75-1VISMaximumBody-DiodeContinuousCurrent-2.2ADYNAMICPARAMETERSCissInputCapacitance954pFCossOutputCapacitanceVGS=0V,VDS=-15V,f=1MHz115pF

7、CrssReverseTransferCapacitance77pFRgGateresistanceVGS=0V,VDS=0V,f=1MHz6ΩSWITCHINGPARAMETERSQgTotalGateCharge9.4nCQgsGateSourceChargeVGS=-4.5V,VDS=-15V,ID=-4A2nCQgdGateDrainCharge3nCtD(on)Turn-OnDelayTime6.3nstrTurn-OnRiseTimeVGS=-10V,VDS=-15V,RL=3.6Ω,3.2nstD(off)Tu

8、rn-OffDelayTimeRGEN=6Ω38.2nstfTurn-OffFallTime12nstrrBodyDiodeReverseRecoveryTimeIF=-4A,dI/dt=100A/µs20.2nsQrrBodyDiodeReverseRecoveryChargeIF=-4