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1、pubs.acs.org/Langmuir©2009AmericanChemicalSocietyGalvanicDepositionofPtClustersonSilicon:EffectofHFConcentrationandApplicationasCatalystforSiliconNanowireGrowthMartaCerruti,*GregoryDoerk,GailHernandez,CarloCarraro,andRoyaMaboudianDepartmentofChemicalEngineering,UniversityofCaliforniaatBerk
2、eley,Berkeley,California94720ReceivedJune5,2009.RevisedManuscriptReceivedOctober1,2009WereportonthegalvanicdepositionofPtonSifromsolutionscontainingPtCl2anddifferentconcentrationsofHF.Theresultsshowthatforlow[HF]/[Pt]ratios(e26),onlyathinlayerofPtSiisformed.ThedepositionrateofPtincreaseswi
3、th[HF]intheplatingsolution,upto[HF]/[Pt]∼530;afterthisratio,themorphologyofthePtfilmchanges:largerclustersareformed,whichcovertheSisubstratelessdensely.DetailedatomicforcemicroscopyandX-rayphotoelectronspectroscopyanalysesshowthatthedepositedPtlayersdonotcompletelycovertheSisubstrate.ThePt
4、andPtSifilmsformedareabletocatalyzetheformationofSinanowires(SiNWs)arraysformedviavapor-liquid-solid(VLS)process.BychangingtheimmersiontimeinthePtplatingsolution,SiNWsarrayswithdifferentdensity,diameter,andorientationareobtained.7I.Introductioncalsystems.Galvanicdepositionhasbeendemonstrat
5、edusinga8-18numberofmetals,includingAu,Ag,Cu,Ni,andPt.ControlleddepositionofPtthinfilmsandnanoparticlesDuringthegalvanicdeposition,theplatingsolutionwiththepromisestohaveimportantimplicationsforemergingnano-saltofthemetaltobedepositedneedstocontainalsoanagenttechnologies.Forinstance,whileA
6、uistypicallyusedasthethatcanremovetheoxidizedsubstrateformedduringthecatalystinVLSgrowthofSiNWs,AuincorporatedintotheSideposition,otherwiseapassivatedlayerwouldpreventfurtherlatticecanintroducedeep-leveltrapsinthebandgapthattypically61-3metaldeposition.ForgalvanicdisplacementperformedonSi,
7、poisonanyopticalorelectronicdevices.Ptontheotherhand4thisisachievedwiththeadditionofHFintheplatingsolution.AsdoesnotadverselyaffectsiliconelectronicsasmuchasAudoes.anexample,theoverallreactiondescribinggalvanicdisplacementInaddition,PtandPtSiareusedascontactsf
