半导体物理与器件课后答案第8章

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1、rdSemiconductorPhysicsandDevices:BasicPrinciples,3editionChapter8SolutionsManualProblemSolutionsChapter8ProblemSolutions8.4Thecross-sectionalareais−38.1I1010x−42A===510xcmIntheforwardbiasJ20FeVIWehaveII≈expfSHKkTFVDIF065.IJJ≈⇒exp20=JexpThenSHGKJSHKV00259.tF

2、eV1IexpsothatIf1ISHkTKLeO−102=⋅=expafVV−Jx=2.5210A/cm12SIIFeV2INMkTQPf2SexpHKWecanwritekTLO11DDor2npJeSi=⋅nM+⋅PNττNkTFIINanOdpOQFIf1VV−=ln12HKWewanteHGIKJf21D(a)n⋅INaτnOf1=010.For=⇒10V−=V59.9mV≈60mV12If211DnDp⋅+⋅(b)NττNanOdpOIf1orFor=⇒−=100VV119.3mV≈120mV1

3、2If2125⋅−7Nxa5108.2125110eV⋅+⋅LFIO−−77II=−exp1NxNxad510510SHKNMkTQP37.0710xorwecanwritethisas==010.NIFeVI33a+=1exp7.0710x+bg4.4710xHKNIkTdSwhichyieldssothatNkTFIIaFI=14.24V=+ln1NHeKHGIKJdSNowInreversebias,Iisnegative,soat2−−101910IJxS==2.5210b1610..xxgb1510

4、g=−090.,wehaveISL125110O×⋅M−−77+⋅PV=−()00259.ln.()1090⇒N()14.24NxNx510510QddorWefindVm=−59.6V14−3Nxc=7.110mdand8.316−3Nx=10110.cmComputerPlota101rdSemiconductorPhysicsandDevices:BasicPrinciples,3editionChapter8SolutionsManualProblemSolutions8.5(a)JbgσσnnpeD

5、n=npOJJ+bgσσ+4.90npnpJLnn=JJ+eDnnpOeDppnOnp+8.6LL+npForasiliconpnjunction,2Dnni1D⋅2pIA=⋅enτNSinOaNτ=dpO22DnDnnipi⋅+⋅−−419102112ττnONapONd=⋅bgbgbg101610..xx151016−710101or=−15DpnτOFNaIIxS=39410.A1+⋅DτHGNKJThennpOdWehaveFVDI−15F050.III==expbg39410.xexpDSHGKJH

6、KDpµp1τnO1Vt00259.==and=Dµ2.4τ01.ornnpO−7Ix=9.5410AsoDJ1n=8.7JJ+11FNInpa1+⋅HGKJWewant2.401.NdJnor=095.JJ+npJ1n=eDnDJJ+FNInpOnnpa12+().04LLNHGNKJ=n=nadeDneDpDD(b)npOpnOnp++UsingEinstein’srelation,wecanwriteLLLNLNnpnapd2eµnniD⋅nJLNnnaL==n22JJnp+eµnnieµpniDDpN

7、⋅+⋅n+⋅aLnNaLpNdLLNnpdeNµWeobtainnd=L−6nLD==τ()250110bg.x⇒eNµµ+⋅eNnnnOndpaLpLm=158.µnWehave−6σµnn=eNdandσµpp=eNaLDpp==τpO()100110bg.x⇒AlsoLm=10µpLDτ2.4ThennnnO===4.90LDτ01.pppOThen102rdSemiconductorPhysicsandDevices:BasicPrinciples,3editionChapter8SolutionsM

8、anualProblemSolutions25FVIDII=expS095.=158.HGVtKJ2510FNIa05.I+⋅−15F158.10HGNKJ=bg4.4810xexpdH00259.KwhichyieldsorNaIA=108.µ=0083.N(c)dTheholecurrentisproportionalto8.821DpIe∝⋅⋅nAPiFNINτadpO(a)p-side:EE