半导体物理与器件课后答案第10章

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1、rdSemiconductorPhysicsandDevices:BasicPrinciples,3editionChapter10SolutionsManualProblemSolutionsChapter10im=17.64AProblemSolutionsE10.110.5Sketchi510C(a)β==⇒β=85i610.2BSketchβ85α==⇒α=09884.1+β8610.3iii=+=+⇒5106iA=516µECBEeDAnnBEBO(a)I=(b)SxB2.65−−19()44β=⇒β=53b1610.xg2010bgb10g

2、005.=−41053α=⇒α=09815.−14orIxA=3210.54S(b)i=+⇒2.65005.im=2.70AEE−14F05.I(i)ix=⇒3210.expCHK00259.10.6(c)Forim=005.,AiA=7.75µBCii==β()100005().⇒im=5A06.ICBC−14F(ii)ixC=⇒3210.expHKWehave00259.vVi=−=−R10()()51CECCCim=0368.ACor−14F07.IvVCE=5(iii)ix=⇒3210.expCHK00259.im=17.5A10.7C(b)V

3、I=++RVVCCCCBBE10.4so10=+I()20+06.α09920.C(a)β==⇒β=124or1−α109920−.Im=4.7A(b)From10.3bCi7.75C(i)ForiA=7.75µ;i==⇒CB10.8β124(a)iA=00625.µ,2B210nb1510.xgi43−F11+βIF25InpO==16=2.2510xcmii=⋅=()7.75⇒N10ECHGKJHKBβ124Atx=0,iA=7.81µEFVIBEnn()0=exp(ii)Forim=0368.,AiA=2.97µ,ppOCBHGVKJtim=03

4、71.AorwecanwriteE(iii)Forim=17.5A,im=0141.A,Fnp()0ICBVV=lnBEtHGnKJpO139rdSemiconductorPhysicsandDevices:BasicPrinciples,3editionChapter10SolutionsManualProblemSolutions()1615−3orWewantnc0=×=10%1010m,Pxm=0118.µSop215NowF10IVBE=()00259.lnHG4KJxxxxBB=−−=−−Opp12110...020701182.2510x

5、ororxm=0775.µVV=0635.BBE(b)10.9Atx′=0,22b1510.x10gFVInipp()0=expBE(a)p==⇒EO17nnOHGKJN510xVEt23−wherepx=4.510cmEO2210nbg1510.x2i33−n2bg1510.x10p===2.2510xcminO17n==⇒N10BO16EN10BThen43−nx=2.2510cmF0635.IBO()3px02=⇒.2510expn2H00259.Kn2b1510.x10gi14−3p==⇒pc()01=0mCO15nN10C(c)53−px=2

6、.2510cmFromtheB-Cspacechargeregion,CO12/(b)L21∈+afVVFNIFIObiR1Cx=FVIp1BENMeHGNNNBCBKJHG+KJQPnnBB()0=OexpHGKJVWefindtL1615O4F0625.Ib10gb10g=bg2.2510xexpHKV==()00259.lnMP0635.V00259.bi1210MNbg1510.xPQorThen()14−3nx0=68010.cmB−14L211788510()..bgx(06353.+)Alsoxp1=M−19N1610.xFVBEIpp(

7、)0=expEEO12/15HGVKJF10IF1IOt×161516F0625.IHG10KJH10+10KQP=bg4.510x2expHKor00259.xm=0207.µorp1()13−3px0=13610.cmWefindEL1716Ob10gb10gV==()00259.lnMP0754.V10.10bi2210MNbg1510.xPQ2102nbg1510.xiThen(a)n==⇒EO18−14NE10L211788510()..bgx(0754.−0635.)x=23−p2M−19nx=2.2510cmN1610.xEO221017

8、12/nb1510.xgF10IF1IOp==i⇒×BO1616H1716KN510xHG10