Chemical reactions in the detection of acetone and NO by a CeO2 thin film (1)

Chemical reactions in the detection of acetone and NO by a CeO2 thin film (1)

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时间:2019-07-01

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1、SensorsandActuatorsB71(2000)36±41ChemicalreactionsinthedetectionofacetoneandNObyaCeO2thin®lma,*aabR.Bene,I.V.Perczel,F.ReÂti,F.A.Meyer,bbM.Fleisher,H.MeixneraDepartmentofAtomicPhysics,TUBudapest,BudafokiuÂt8,1111Budapest,HungarybSiemensCorporateResearch&De

2、velopment,Otto-Hahn-Ring6,81739Munich,GermanyAccepted22June2000AbstractThisworkpresentsanattempttoapplytheundopedn-typesemiconductorCeO2inthedetectionofgasesÐacetoneandNOÐinanoxygencontainingenvironment.However,insuchgasmixturechemicalreactionsmaytakeplace

3、atandnearthehotsensorsurface,changingthecompositionofthegasenvironment.TheeffectofCeO2ÐitscatalyticactivityÐwasstudiedintheoxidationofacetoneandNOduringtheirdetection.Forthispurpose,aparticularexperimentalset-upwasplannedandbuilt:aspecial,¯owtypequartzmicr

4、oreactorconnectedtoamassspectrometer,offeringthepossibilityforsimultaneousresistancemeasurementandanalysisofthenearsensorgascomposition.Thesensorwasoperatedbothinself-andoven-heatedmodebetween20±9008C.ThemaximumsensitivityofCeO2wasfoundbetween350±4508Cforb

5、othgases.Whileacetonecausesawellmeasurableresistancechange,thesignalduetoNOisquitesmall.TheCeO2surfaceprovedtobecatalyticallyactiveintheoxidationofacetoneresultingintheformationofCO2.Surprisingly,thesamesurfaceledtothereductionofNO.#2000ElsevierScienceB.V.

6、Allrightsreserved.Keywords:CeO2oxidesemiconductor;Gassensor;Acetone;NO1.Introductionphasechangingitslocalcomposition.Asthesensorsingeneralaresmallandspeciallydesigneddevices,theirOxidesemiconductorbasedsensorshavebeencommer-catalyticactivityisdif®culttobes

7、tudied.ciallyavailableformanyyears.Accordingtomarketneeds,Forthispurpose,aspecialdeviceisneeded:aninstrumentastablesensormaterialworkingathightemperatureisthatcombinesthepossibilitiestomeasurethesensorresis-desirableforchemicalorvehicleindustry.tanceandtoa

8、nalysewithhighaccuracythecompositionofCericoxideisann-typesemiconductor[1];itisaquitethenearsurfacegasregion.Inthiswork,suchanequipmentnewsensormaterialandseemsto®ttheaboverequirements.ofourdevelopment[4]wass

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