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1、2N6660,VQ1004J/PVishaySiliconixN-Channel60-V(D-S)SingleandQuadMOSFETsPRODUCTSUMMARYPartNumberV(BR)DSSMin(V)rDS(on)Max(W)VGS(th)(V)ID(A)2N66603@VGS=10V0.8to21.160VQ1004J/P3.5@VGS=10V0.8to2.50.46FEATURESBENEFITSAPPLICATIONSDLowOn-Resistance:1.3WDLowOffsetVoltageDDirectLogic-L
2、evelInterface:TTL/CMOSDLowThreshold:1.7VDLow-VoltageOperationDDrivers:Relays,Solenoids,Lamps,Hammers,DLowInputCapacitance:35pFDEasilyDrivenWithoutBufferDisplays,Memories,Transistors,etc.DFastSwitchingSpeed:8nsDHigh-SpeedCircuitsDBatteryOperatedSystemsDLowInputandOutputLeaka
3、geDLowErrorVoltageDSolid-StateRelaysDual-In-LineTO-205ADDeviceMarking(TO-39)D1114D4TopViewNS1S4N213VQ1004J“S”fllxxyySDeviceMarkingG1312G4SideView1NCNC411VQ1004P2N6660“S”fllxxyy“S”fllxxyyG2510G3“S”=SiliconixLogoNS269S3N“S”=SiliconixLogo23f=FactoryCodef=FactoryCodeGDll=LotTra
4、ceabilityD278D3ll=LotTraceabilityxxyy=DateCodexxyy=DateCodeTopViewTopView2N6660Plastic:VQ1004JSidebraze:VQ1004PABSOLUTEMAXIMUMRATINGS(TA=25_CUNLESSOTHERWISENOTED)SingleTotalQuadParameterSymbol2N6660VQ1004JVQ1004PVQ1004J/PUnitDrain-SourceVoltageVDS606060VGate-SourceVoltageVG
5、S"20"30"20ContinuousDrainCurrentTC=25_C1.10.46"0.46ID(TJ=150_C)TC=100_C0.80.260.26APulsedDrainCurrentaIDM322TC=25_C6.251.31.32PowerDissipationPDWTC=100_C2.50.520.520.8ThermalResistance,Junction-to-AmbientbRthJA1700.960.9662.5_C/WThermalResistance,Junction-to-CaseRthJC20Oper
6、atingJunctionandStorageTemperatureRangeTJ,Tstg–55to150_CNotesa.Pulsewidthlimitedbymaximumjunctiontemperature.b.ThisparameternotregisteredwithJEDEC.DocumentNumber:70222www.vishay.comS-04379—Rev.E,16-Jul-0111-12N6660,VQ1004J/PVishaySiliconixSPECIFICATIONS(TA=25_CUNLESSOTHERWI
7、SENOTED)Limits2N6660VQ1004J/PParameterSymbolTestConditionsTypaMinMaxMinMaxUnitStaticDrain-SourceBreakdownVoltageV(BR)DSSVGS=0V,ID=10mA756060VGate-ThresholdVoltageVGS(th)VDS=VGS,ID=1mA1.70.820.82.5VDS=0V,VGS="15V"100"100Gate-BodyLeakageIGSSnATC=125_C"500"500VDS=60V,VGS=0V10V
8、DS=35V,VGS=0VVDS=48V,VGS=0V1ZeroGateIDSSmAVoltageDrainCurrentTC=125_C500500VDS=28V
