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1、Vol.33,No.5JournalofSemiconductorsMay2012Lightextractionefficiencyenhancementinlight-emittingdiodeswithindiumtinoxidenano-cratersZhengHuaiwen(郑怀文)Ž,ZhangYiyun(张逸韵),YangHua(杨华),XueBin(薛斌),WuKui(吴奎),LiJing(李璟),andWangGuohong(王国宏)SolidStateLightingResearchandDevelopmentCentre,Insti
2、tuteofSemiconductors,ChineseAcademicsofSciences,Beijing100083,ChinaAbstract:Asimpleandlowcostmethodisdescribedwhichimprovesextractionefficiency.Theindiumtinoxide(ITO)texturedfilmwasfabricatedbyusingtheself-assemblymethodanddry-etching.Thesurfacemorphologiesandsurfaceroughnesswere
3、observedbyusinganatomicforcemicroscope.TheI–Vcharacteristics,outputpowerandpolarradiationpatternoftheLEDswithandwithouttexturedITOweremeasuredforcomparison.CylindersandcraterswereformedontheITOsurfaceaftertheetching,theheightofwhichincreasedwithetchingtime.Theoutputpowerofthedevi
4、cesisproportionaltotheetchingtime.TotalinternalreflectionoflightontheITO-GaNinterfaceisreducedduetotheappearanceofcylindersandcraters,andtheirincreasingheight.Thus,theoutputpowerisimproved.Keywords:indiumtinoxide;self-assembly;light-emittingdiodes;texturedsurfaceDOI:10.1088/1674-
5、4926/33/5/054009EEACC:25601.Introductionlayer,a2-m-thickundopedGaNlayer,a2-m-thickheav-ilydopedn-typeGaNlayer,10pairsofInGaN(3nm)/GaNGaN-basedlight-emittingdiodes(LEDs)haveattracted(12nm)multiplequantumwells(MQWs)withatotalthick-considerableinterestinrecentyearsduetotheirhugede
6、mandnessof0.15m,anda0.2-m-thickp-typeGaNlayer.Af-andpotentialforvariousapplicationsŒ1•.However,themajoritytera300-nm-thickITOtransparentconductivelayerwasde-ofapplicationsarecurrentlyhinderedbythelowlightextrac-positedonthewaferbyanelectronbeamsystem,monodis-tionefficiencyandLa
7、mbertian-likeradiationprofilecausedbypersepolystyrene(PS)nanoparticleswithadiameterof1mthelargedifferenceintherefractiveindexbetweentheLEDwereassembledintoacloselypackedmonolayerontheITOdieandtheexternalmediumŒ2;3•.Mostphotonsaretrappedin-layerbyusingtheself-assemblymethod.TheGa
8、NLEDwassidetheLEDdevicebytotalinternalre
