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1、thPreprintofthe24EuropeanPhotovoltaicSolarEnergyConference&Exhibition,Hamburg,21-25September20093BO.9.3HIGH-EFFICIENCYAMORPHOUSSILICONDEVICESONLPCVD-ZNOTCOTMPREPAREDININDUSTRIALKAI-MR&DREACTORS.Benagli,D.Borrello,E.Vallat-Sauvain,J.Meier,U.Kroll,J.Hoetzel,J.Bailat,J.Steinhauser,M.Marmelo,G.
2、MonteduroandL.CastensOerlikonSolar-LabS.A.Neuchâtel,Puits-Godet12a,CH-2000Neuchâtel,Switzerland,ABSTRACT:Thispaperpresentsastudyontheoptimali-layerthicknessforhighefficiencyamorphoussiliconp-i-nsolarcellsdepositedondopedLPCVD-ZnO.Theoptimizationhasledtoexcellentstabilizedefficienciesatremar
3、kablylowamorphousi-layerthicknesses.Alight-soakedsingle-junctiona-Si:Hcellwithrecordefficiencyof210.09%on1cmwasindependentlyconfirmedbyNREL.Inatable,resultsofmeasurementsdoneonthesamedevicesatOerlikonSolar-LabNeuchâtelandNRELlaboratoriesrevealverylowdeviationsbetweenbothcharacterizations.Th
4、eprocessesdevelopedfora-Si:Hcellswereappliedtothepreparationofmini-modules2(10x10cm).Measurementsontheselight-soakedmini-modulesatESTIlaboratoriesofJRChaveconfirmedamoduleapertureefficiencyof9.20±0.19%.Keywords:a-Si,Lighttrapping,Deposition,PECVD,SolarCellEfficiencies,LPCVD-ZnO,Manufacturin
5、gandProcessing,Light-soaking1INTRODUCTION2EXPERIMENTALOnthepathtowardsachievinggridparity,thinfilmThepresentedp-i-na-Si:Hsolarcellsweredeposited2solarmodulesbasedonamorphoussiliconandinaR&Dsingle-chamberKAI™-Msystem(52x41cm®Micromorphtandemtechnologiesofferasignificantsubstratesize).Anin-si
6、tuplasmaprocesswasusedtopotentialformanufacturingcostsreduction.ForbothcleantheKAI™plasmaboxreactoraftereachcellrun.technologiesthesiliconfilmscanbedepositedinsingle-PreviousstudiesdemonstratedthatanexcellentchamberPlasmaEnhancedChemicalVaporDepositionqualityamorphoussiliconi-layer(at3.35Å/
7、s)couldbeTM(PECVD)reactorsliketheOerlikonKAIsystem.depositedbyusinganexcitationfrequencyof40.68MHzTMPreviousstudieshaveproventhattheKAIreactor[5,6,7].Inthisnewstudy,thei-layerdepositionratewascanproducehigh-qualityamorphoussiliconp-i-ncellsreducedto1.75Å
