单晶硅片生产陈述

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1、CzochralskiGrowthofSiliconCzochralskiGrowthofSiliconWafersWafersSeniorDesignProjectFacultyAdvisor:T.R.SinnoSeanCusackEijiTakizawaJoyceTamCzochralskiGrowthofSiliconWafersSlide1ProjectOutlineProjectOutline‧Isiteconomicallyfeasibletoenterthesiliconwafermarket?–Describeaprocesstopro

2、ducesiliconwafers–Introducearevolutionarymethodforreducingplantcapitalcost(batchrecharge)–EvaluateeconomicfeasibilityofenteringmarketusingbothtraditionalandbatchrechargemethodsCzochralskiGrowthofSiliconWafersSlide2SiliconWaferBasicsSiliconWaferBasics‧WaferDiameters:200mmor300mm‧

3、WaferThickness:~650●m‧WaferPurity:150parts/trillionimpurities(99.99999999%Si)‧SingleCrystalCzochralskiGrowthofSiliconWafersSlide3SiSiWaferProductionWaferProductionH2Separation&PurificationInitialReactionDepositSolidSiMGSChlorosilanesPureSiHCl3HClPurepoly-EGSGrowSingleCrystalEGSI

4、ngotSiWafersCzochralskiGrowthofSiliconWafersSlide4DepositSolidDepositSolidSiSi:SiemensReactor:SiemensReactor‧PureSiHClinGasPhasePureSiinSolidPhase?3–ChemicalVaporDeposition(CVD)process–SpecificReactorType=SiemensReactor‧Depositionprocessisslow–10days/ton‧HowmanySiemensreactorsar

5、erequired?–12SiemensreactorsrequiredCzochralskiGrowthofSiliconWafersSlide5CzochralskiCrystalGrowerCzochralskiCrystalGrower‧Poly-EGSismeltedinaquartzcrucible(SiO)‧Seedparticleintroducedtobegincrystallization‧Seedpulledtogeneratedesiredwaferdiameter‧Ingotiscooled‧Crucibleisdiscard

6、ed(warpingandcracking)2CzochralskiGrowthofSiliconWafersSlide6FinishedCrystalPartsFinishedCrystalPartsSeed:StartsCrystalNeck:PreventsthermalshockShoulder:TransitionstobodysectionBody:PartofcrystalslicedintowafersEndcone:PreventsthermalshockCzochralskiGrowthofSiliconWafersSlide7En

7、dConeEndConeFemlabFemlabresultsresultsBestbalancebetweensiliconlossandthermalshockreduction.2HeatFlux(W/m-K)CzochralskiGrowthofSiliconWafersSlide8CzochralskiResultsCzochralskiResults‧Frompresenteddata,wecancalculate:–Throughput/Czgrower‧TotalnumberofCzgrowersrequired26CzGrowersn

8、eededtoproduce100,000wafers/monthCzochralskiGro