FT-LCD_工艺制程简介

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1、2009年04月21日TFT-LCD工艺制程简介周　刚7/15/202112:11:53AM周刚09-4-19编写Contents2.1.3.ArrayprocessModuleProcessCellProcessTFTLCD客户导向，团结协作DeptEveryProcessisimportant天马显示屏无处不在精益生产，精益管理TeamworkTFT-LCDCOGRecipeOICSTKODFADITFT-LCDENGLISH一：ArrayProcessARRAY生产计划PHOTOWETCVDPVDDRYOrganizat

2、ionArrayLayoutTFTARRAYPROCESSCC'ITOpixelelectrodeCross-sectionC-C’SelectlineDatalineStoragecapacitorCC'ITOpixelelectrodeCross-sectionC-C’SelectlineDatalineStoragecapacitora-SiTFTTFTStructureDepositandpatterngatemetalFunctions:GateofTFTSelectlinesBottomelectrodeofsto

3、ragecapacitorMetaloptions:Ti/Al/TiAl/MoCrMoCC'Cross-sectionCC’a-SiTFTarrayprocess–step1a-SiTFTarrayprocess–step2DepositionofSiN/a-Si/n+byPECVD,patterningofa-SiSiNisgatedielectricandstoragecapacitordielectricSelectiveetchofa-SiSiNisnotetchedCC'SiNa-Si/n+a-SiTFTarrayp

4、rocess–step3Depositionandpatterningofsource/drainmetalFunctions:SourceanddrainmetalDatalinemetalMetaloptionsTi/Al/TiorTi/AlCrMoorMo/AlBacketchofn+a-SifromchannelareaCC'a-SiTFTarrayprocess–step4DepositionandpatterningofpassivationSiNbyPECVDFunction:PassivateTFTCC'a-S

5、iTFTarrayprocess–step5DepositionandpatterningofITOFunction:PixelelectrodeTopelectrodeofstoragecapacitorCC'ITOpixelelectrodeCross-sectionC-C’SelectlineDatalineStoragecapacitorCC'ITOpixelelectrodeCross-sectionC-C’SelectlineDatalineStoragecapacitora-SiTFTTFTARRAYPROCES

6、S___PVD/CVDUsedforITO(IndiumTinOxidetransparentconductor)andformetals(Al,Mo,Cr,etc.)DCSputterdepositionSchematicdiagramofDCpoweredsputterdepositionequipment(glowdischarge)ground-V(DC)VacuumCathodeshield~-100-1000VPVD原理ACLSLoadlockT/CP/CP/CP/CP/CP/CAKT-5500PECVD(即等离子

7、体增强化学气相沉积)工作原理:采用等离子辅助对化合物进行催化分解目的:利用等离子体辅助活化反应气体,降低反应温度,改善薄膜质量PECVD原理LayerFeedgasMaterialTempFunction3LayerSiH4,N2,NH3A-SiNx320~350℃GateinsulatorSiH4,H2a-SiSemiconductorSiH4,PH3,H2n+a-SiContactlayeratsourceanddrain1LayerSiH4,N2,NH3A-SiNx270~290℃passivation温度气体流量比(S

8、i:H,N:H,Si:N)RFPressureSpacing(上下电极间距)影响成膜工艺的主要参数周刚09-4-19编写M/AEUVMAINTEXT/COL4U/CU/CU/CU/CC/SSCRHP3HP3HP1HP3HP1COL1COL1M/ADPDEVELOPEREXTP