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1、2009年3月润滑与密封Mar12009第34卷第3期LUBRICATIONENGINEERINGVol134No133PECVD法硅基氮化硅薄膜的制备及其耐磨性研究1,32,3王大刚张德坤(11中国矿业大学机电工程学院江苏徐州221116;2.中国矿业大学材料科学与工程学院江苏徐州221116;3.摩擦学国家重点实验室生物摩擦学中心北京100086)摘要:以N(111)型的单晶硅片为基体,运用PECVD22D等离子体化学气相淀积台在单晶硅片表面沉积氮化硅薄膜,通过薄膜颜色与厚度间的关系探讨了制备工艺参数对薄膜厚度的影响,用原位纳米力学测试系统对氮化硅薄膜的纳米硬度
2、进行测定,在UMT22型摩擦试验机上对不同制备工艺的硅基氮化硅薄膜进行耐磨寿命试验。结果表明:随着沉积温度的升高,薄膜厚度逐渐递减,SiH4和N2流量比越大,薄膜厚度越大;温度越高,薄膜硬度越大,耐磨寿命越长;随着SiH4和N2流量比的增加,薄膜硬度和耐磨寿命均先增加后减小。关键词:单晶硅;氮化硅;薄膜厚度;纳米硬度;耐磨寿命中图分类号:TH11711文献标识码:A文章编号:0254-0150(2009)3-012-4PreparationofSilicon2basedSiliconNitrideFilmsbyPECVDandResearchontheWearing
3、Properties1,32,3WangDagangZhangDekun(11CollegeofMechanicalandElectricalEngineering,ChinaUniversityofMiningandTechnology,XuzhouJiangsu221116,China;21CollegeofMaterialsScienceandEngineering,ChinaUniversityofMiningandTechnology,XuzhouJiangsu221116,China;3.BiotribologyCenterofNationalKeyLa
4、boratoryofTribology,Beijing100086,China)Abstract:Singlecrystalsiliconwaferswithcrystaldirectionof(111)werechosenasthesubstrates.SiliconnitridefilmsweredepositedonsinglecrystalsiliconsurfacesusingthePECVD22Dplasmachemicalvapordepositionsystem.Theinfluenceofpreparationtechnologyparameter
5、sonfilmthicknesseswasdiscussedfromtherelationshipbetweenfilmcolorsandfilmthicknesses.Nano2hardnessofsiliconnitridefilmsweremeasuredwiththeTriboIndenterinthenano2scaleme2chanicalpropertytestsystem.Wearlifetestsofsilicon2basedsiliconnitridefilmsofdifferentpreparationtechnologyparam2eters
6、werecarriedoutwiththeUMT22typefrictiontester.Theresultsshowthatthefilmthicknessdecreaseswiththein2creaseofthedepositiontemperature.ThelargertheSiH4andN2flowrateratio,thethickerthefilm.Thehigherthetemper2ature,thelargerthenano2hardnessofthesiliconnitridefilm,andthelongerthewearlifeofthe
7、film.Thenano2hardnessandwearlifeincreasefirstlyandthendecreaseswiththeincreaseoftheSiH4andN2flowrateratio.Keywords:singlecrystalsilicon;siliconnitride;filmthickness;nano2hardness;wearlife[1]氮化硅薄膜是一种精细陶瓷薄膜,由于它具有致晓泉等用等离子体化学气相沉积法(PECVD)法密结构,高强度,良好的耐磨、耐高温性能,优良的在P型硅片上沉积了氮化硅(SiNx)薄膜,运用薄膜绝缘
