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时间:2019-03-01
《vhf—pecvd法氢化微晶硅薄膜的低温制备》由会员上传分享,免费在线阅读,更多相关内容在教育资源-天天文库。
1、维普资讯http://www.cqvip.com第23卷第9期半导体学报Vo1.23.No.92002年9月CHINESEJOURNAIOFSEMIC()NDUCTORSSep.,2002FabricationofHydr0genatedMicrocrystallineSiliconThinFilmsatLowTemperaturebyVHF—PECVDYangHuid0ng,WuChunya,MaiYaohua,LiH0ngb0,XueJunming.LiYan.RenHuizhi,ZhangLizhu。,GengXinhuaandXi0ngSha0zh
2、en(1InstituteofPhotoelectromcs,NankaiUniversity,Tianfl'n300071,Chin)(2InstituteofThinFilmsandNanoMaterials,WuyiUniversity,Jiagme529020。Chid)(3TianjinSchoolofMechanicalandElectricalIndustry,rianji300071,Chid)Abstract:UsingHz—dilutedsilane,seriesofc—Si:Hfilmsarefabricatedatlowtemper
3、aturewithVHF—PECVD.Thethicknessmeasurementsrevealthatthedepositionratesareobviouslyenhancedwithhigherplasmaexcitationfrequencyorworkingpressure’butincreasefirstlyandthendecreasewiththeincreaseofplasmapowerdensitv.Ra—manspectrashowthatthecrystallinityandtheaveragegrainsizesofthefil
4、msstronglydePendonthetemDeratureofsubstrateandtheconcentrationofsilane.However,theplasmaexcitationfrequencyonlyhaseffectonthecrs—tallinity'andamaximumoccursduringthefurtherincreaseofplasmaexcitationfrequency.Fr。mXRDandTEMexperlments’threepreferentialcrystallineorientations(111),(2
5、20)and(311)areobserved,andtheaveragegrainsizesaredifferentforeverycrystallineorientation.Keywords:tac—Si:Hthinfilms;VHF—PECVD;depositionrate;crystallinityPACC:7360F;7280N;8115HCLCnumber:TN304·055Documentcode:AArticleID:0253—4177(2002)09—0902—07Sincec—Si:Hhasanindirectbandgap,whenu
6、s1Introductioningasasolareellactivematerial,itsthicknessusu—allyshouldbemorethan2pmforsufficientabsorD—Inrecentyears,moreandmoreattentionshavetionofsunlightevenusingopticaltrappingtechbeenpaidtohydrogenatedmicrocrystallinesiliconnique.However,thedepositionrateof“c—Si:H(c—Si:H)film
7、depositedatlowtemperaturebefabricatedwithconventionalRFPECVDisgener-causeofitspromisingapplicationtostablehighef—allymuchlowerthanthatofhydrogenatedamor—ficiencysolarcells[引,andalargepotentia1tobephoussilicon(a—Si:H).Inordertoincreasetheappliedtothinfilmtransistorsandcolorsen—depo
8、sitionrateofc—Si:H,techniquessuch
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