vhf—pecvd法氢化微晶硅薄膜的低温制备

vhf—pecvd法氢化微晶硅薄膜的低温制备

ID:33932639

大小:207.84 KB

页数:7页

时间:2019-03-01

vhf—pecvd法氢化微晶硅薄膜的低温制备_第1页
vhf—pecvd法氢化微晶硅薄膜的低温制备_第2页
vhf—pecvd法氢化微晶硅薄膜的低温制备_第3页
vhf—pecvd法氢化微晶硅薄膜的低温制备_第4页
vhf—pecvd法氢化微晶硅薄膜的低温制备_第5页
资源描述:

《vhf—pecvd法氢化微晶硅薄膜的低温制备》由会员上传分享,免费在线阅读,更多相关内容在教育资源-天天文库

1、维普资讯http://www.cqvip.com第23卷第9期半导体学报Vo1.23.No.92002年9月CHINESEJOURNAIOFSEMIC()NDUCTORSSep.,2002FabricationofHydr0genatedMicrocrystallineSiliconThinFilmsatLowTemperaturebyVHF—PECVDYangHuid0ng,WuChunya,MaiYaohua,LiH0ngb0,XueJunming.LiYan.RenHuizhi,ZhangLizhu。,GengXinhuaandXi0ngSha0zh

2、en(1InstituteofPhotoelectromcs,NankaiUniversity,Tianfl'n300071,Chin)(2InstituteofThinFilmsandNanoMaterials,WuyiUniversity,Jiagme529020。Chid)(3TianjinSchoolofMechanicalandElectricalIndustry,rianji300071,Chid)Abstract:UsingHz—dilutedsilane,seriesofc—Si:Hfilmsarefabricatedatlowtemper

3、aturewithVHF—PECVD.Thethicknessmeasurementsrevealthatthedepositionratesareobviouslyenhancedwithhigherplasmaexcitationfrequencyorworkingpressure’butincreasefirstlyandthendecreasewiththeincreaseofplasmapowerdensitv.Ra—manspectrashowthatthecrystallinityandtheaveragegrainsizesofthefil

4、msstronglydePendonthetemDeratureofsubstrateandtheconcentrationofsilane.However,theplasmaexcitationfrequencyonlyhaseffectonthecrs—tallinity'andamaximumoccursduringthefurtherincreaseofplasmaexcitationfrequency.Fr。mXRDandTEMexperlments’threepreferentialcrystallineorientations(111),(2

5、20)and(311)areobserved,andtheaveragegrainsizesaredifferentforeverycrystallineorientation.Keywords:tac—Si:Hthinfilms;VHF—PECVD;depositionrate;crystallinityPACC:7360F;7280N;8115HCLCnumber:TN304·055Documentcode:AArticleID:0253—4177(2002)09—0902—07Sincec—Si:Hhasanindirectbandgap,whenu

6、s1Introductioningasasolareellactivematerial,itsthicknessusu—allyshouldbemorethan2pmforsufficientabsorD—Inrecentyears,moreandmoreattentionshavetionofsunlightevenusingopticaltrappingtechbeenpaidtohydrogenatedmicrocrystallinesiliconnique.However,thedepositionrateof“c—Si:H(c—Si:H)film

7、depositedatlowtemperaturebefabricatedwithconventionalRFPECVDisgener-causeofitspromisingapplicationtostablehighef—allymuchlowerthanthatofhydrogenatedamor—ficiencysolarcells[引,andalargepotentia1tobephoussilicon(a—Si:H).Inordertoincreasetheappliedtothinfilmtransistorsandcolorsen—depo

8、sitionrateofc—Si:H,techniquessuch

当前文档最多预览五页,下载文档查看全文

此文档下载收益归作者所有

当前文档最多预览五页,下载文档查看全文
温馨提示:
1. 部分包含数学公式或PPT动画的文件,查看预览时可能会显示错乱或异常,文件下载后无此问题,请放心下载。
2. 本文档由用户上传,版权归属用户,天天文库负责整理代发布。如果您对本文档版权有争议请及时联系客服。
3. 下载前请仔细阅读文档内容,确认文档内容符合您的需求后进行下载,若出现内容与标题不符可向本站投诉处理。
4. 下载文档时可能由于网络波动等原因无法下载或下载错误,付费完成后未能成功下载的用户请联系客服处理。