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1、Chapter1TheCrystalStructureofSolids1-1SemiconductorMaterials半導體材料單一材料與複合材料半導體GroupIIIGroupIVGroupVTheelemental(單一)materials,thosethatarecomposedofsinglepiecesofatoms,aresilicon(Si矽)andGermanium(Ge鍺).材料的晶格是由單一種原子所構成Thetwo-element,orbinary,compounds(複合)suchasgalliumarsenide(GaAs砷化鎵)orgalliumphosphi
2、de(GaP磷化鎵)areformedbycombiningonegroupIIIandonegroupVelement.複合材料是由III族與V族所形成材料的晶格是由兩個以上的原子所構成1-2TypeofSolids(a)amorphous(非結晶)(b)polycrystalline(多晶)(c)Singlecrystal(單晶)1-3SpaceLattice(晶格)LatticePoint晶格點Ageneralizedthree-dimensionunitcellisshowninFigure1.4.Therelationshipbetweenthiscellandthelatti
3、ceischaracterizedbythreevectora,b,andc,whichneednotbeperpendicularandwhichmayormaynotbeequalinlength.a,b,c不一定要垂直也不一定要等長(3a,1b,2c)這一點的位置在3個a,1個b,2個cEveryequivalentlatticepointinthethree-dimensionalcrystalcanbefoundusingthevector每個晶格點的位置皆可由下列向量表示rapbq,cswherep,qandsareintegers.p,q,s是整數1-3.2B
4、asicCrystalStructure(a)simplecubic立方結構(b)body-centercubic體心立方結構(c)face-centercubic面心立方結構1-3.3CrystalPlanesandMillerIndices晶格面表示法Thevectorforlatticepointrapbq,cs(1.1)這個平面與a軸的交點位置是ra3b0,c0a這個平面與b軸的交點位置是ra0b2,c0b這個平面與c軸的交點位置是ra0b0,c1bFromtheequation(1.1),theinterceptsofth
5、eplanecorrespondtop=3,q=2ands=1.Nowwritethereciprocalsoftheintercepts,whichgives111,,23,,6321MillerIndices在圖(a)中的晶格面切a,b,c軸於1,,,因此(1/1,1/,1/)=(1,0,0),因此晶格面是(1,0,0),同理在圖(b)中的晶格面是(1,1,0),在圖(c)中的晶格面是(1,1,1)DiamondStructure四面體結構(tetrahedralstructure)Siliconisthemostcommonsemiconductormat
6、erials.SiliconisreferredtoasagroupIVelementandhasadiamondcrystalstructure.GermaniumisalsoagroupIVelementandhasthesamediamondstructure.DiamondStructure材料的晶格是由單一種原子所構成Zincblendestructure(硫化鋅結構)材料的晶格是由兩種原子所構成Thediamondstructurereferstotheparticularlatticeinwhichallatomsareofthesamespecies,suchassili
7、conorgermanium.Thezincblendestructurediffersfromthediamondstructureonlyinthattherearetwodifferenttypesofatomsinthelattice.Compoundsemiconductors,suchasgalliumarsenide,havethezincblendestructure.1.5Imperfections(不完美)and