Plasma Technology for IC Process.pdf

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1、PlasmaTechnologyforICProcessPlasmaTechnologyforICProcess
DiffusionIonImplant
EtchPoly/NitrideOxideMetalPRStripping
LithographNAPlasmaTechnologyforICProcess
ThinFilmPEVCDHDPCVDPVD(Sputtering)
CMPNASTI(ShallowTrenchIsolation)HDPCVDPlasmaEtchingBriefProcessFlow-CopperDualDamasceneDif

2、fusionbarrierIMD-ViaTrenchIMD-TrenchHardMaskARC[SiN][lowkOx]EtchingStop[LowkOx][SiN]Lithography[SiN][SiON]PVDPECVDPECVDPECVDPECVDPECVDTrenchfirstCuBarrierCuseedCVDCuECPCuCMPVialast[TaN]EtchingPEPVDPVDWhatIsPlasma(電漿)？
Aplasmaisaionizedgaswithequalnumbersofpositiveandnegativecharge

3、s.
Amoreprecisedefinition:aplasmaisaquasi-neutralgasofchargedandneutralparticleswhichexhibitscollectivebehavior.
Examples:Sun,flame,neon,light,etc.PlasmaGeneration(1)(1)Ionization(1)Ionizatione-+A→A++2e-(2)ExcitationExcitationExcitation-Excitation---RelaxationRelaxatione-+A→A*+e-A

4、*→A+hv(photon)(3)DissociationDissociatione-+AB→A+B+e-Ionization
Electroncollideswithneutralatomormolecule
Knockoutoneoforbitalelectrone+A→A++2e
Ionizationcollisionsgenerateelectronsandions
ItsustainsthestableplasmaDissociation
Electroncollideswithamolecule,itcanbreakthechemicalbon

5、dandgeneratefreeradicals:e+AB→A+B+e
Freeradicalshaveatleastoneunpairedelectronandarechemicallyveryreactive.
Increasingchemicalreactionrate
VeryimportantforbothetchandCVD.Review
Principle¶Asanelectroncollidesamolecule,itmaybreakchemicalbondandgeneratefreeradicals¶Freeradicalshaveat

6、leastoneunpairedelectronandarechemicallyveryreactive¶Increasechemicalreaction¶KeyfactorforCVDandetch+++PlasmaElectrodes---DCPlasmaReviewP=1atm
PrincipleofDCplasma+－+－+－Electrode+－AI=0IonsheathP«1atm∆V»10-103VWaferλ»10-2-10-1cmDElectrodeAReview
Chargedistribution+++++++++++++++++++

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8、+++++++++++++++++++++++++++++++--