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1、®CenturaMxP+Chamber(centura-mxp)1.01.0TitleCenturaPlatformSystemMxP+ChamberOperationManual2.02.0PurposeTheCenturaMxP+isareactiveionetchchambertypicallyusedforetchingoxideandnitridepatternsinthewafer.3.03.0ScopeTheCenturaplatformisafullyautomated,multi-wafercapacit
2、y,multi-chambersystem.Thesystemconsistsofamainframeassembly(loadlocks,transferchamber,processchambers)andanassociatedsetofremotesupportequipment(RFpowersupplies,vacuumpumps,heatexchangers,computers).Allwaferhandlingandprocessingtakesplaceinthemainframeassembly.Ope
3、ratorinterfacetakesplaceattheCenturacomputerterminallocatedatthefrontofthesystem.TheetchprocessintheMxP+chamberisenhancedbyapplyingarotatingmagneticfieldtotheplasma,whichincreasestheresidencetimeoffreeelectronsintheplasma.Thiscausesmorecollisionsbetweenthefreeelec
4、tronsandthegasmolecules,resultinginamoreionizedandreactivegas.Foursymmetricelectromagneticcoilsarelocatedaroundtheperimeteroftheetchchamber.Currentflowthroughthecoilsproducesarotatingmagneticfield.Thestrengthofthemagneticfieldis0gauss–100gauss.Themagneticfieldlowe
5、rstheDCbiasvoltagepotentialbetweenthechamberanode(gasdistributionplateandthechamberwalls),andthechambercathodebyloweringtheresistanceoftheplasma.Thecoilsareonlyturnedonduringprocessing.ThesimplecathodeistheRFdrivenelectrodeinsidetheetchprocesschamber.Thecathoderec
6、eivesupto1200W(dependingontheprocess)of13.56MHzRFpowerfromtheRFgeneratorintheremoteframe.Ahighvoltagepolyimideelectrostaticchucksecuresthesubstratewithintheprocesschamberduringtheprocess.TheESCpedestalhasheliumchannelscutintoitsface.Thechannelsdistributeheliumacro
7、ssthebackofthewafer.Thisheliumflowincreasestheheattransferfromthewafertothepedestaltopreventphotoresistreticulationonthewafer.4.04.0ApplicableDocuments®4.14.1MxP+DielectricEtchCenturaChamberManual(AppliedMaterialsdocument)®4.24.2SiliconEtchCenturaMainframe(Applied
8、Materialsdocument)4.34.3MaterialSafetyDataSheetsforthefollowinggases:SF6,O2,Cl2,HBr,CHF3,C4F8,CF4,Ar,He,andN2(copyinMicrolablobby).5.05.0Definitions,Pro
