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1、www.advmat.deSynthesis,Structure,andPropertiesofBoron-andNitrogen-DopedGrapheneByL.S.Panchakarla,K.S.Subrahmanyam,S.K.Saha,AchutharaoGovindaraj,H.R.Krishnamurthy,U.V.Waghmare,*andC.N.R.Rao*COMMUNICATIONGraphenehasemergedasanexcitingmaterialbecauseoftheforfacilitatingitsapplicationsinelectron
2、ics,andgraphene[1,2][11]novelpropertiesassociatedwithitstwo-dimensionalstructure.bilayersareanattractiveoptionforthis.Withthismotivation,Single-layergrapheneisaone-atomthicksheetofcarbonatomsweprepared,forthefirsttime,B-andN-dopedgraphene(BGdenselypackedintoatwo-dimensionalhoneycomblattice.It
3、isandNG)bilayersamplesbyemployingdifferentstrategiesandthemotherofallgraphiticformsofcarbon,includinginvestigatedtheirstructureandproperties.Wealsocarriedoutzero-dimensionalfullerenesandone-dimensionalcarbonnano-first-principlesdensityfunctionaltheory(DFT)calculationsto[1]tubes.Theremarkablef
4、eatureofgrapheneisthatitisaDiracunderstandtheeffectofsubstitutionaldopingonthestructureofsolid,withtheelectronenergybeinglinearlydependentonthegrapheneaswellasitselectronicandvibrationalproperties.wavevectorneartheverticesofthehexagonalBrillouinzone.ItToprepareBGsandNGs,weexploitedourrecentr
5、esultin[3]exhibitsaroom-temperaturefractionalquantumHalleffectwhichitwasdeterminedthatarcdischargebetweencarbonandanambipolarelectricfieldeffectalongwithballisticelectrodesinahydrogenatmosphereyieldsgraphenes(HG)[4][12]conductionofchargecarriers.Ithasbeenreportedrecentlycomposedoftwotothreela
6、yers.Themethodmakesuseofthethatatop-gatedsingle-layergraphenetransistorisabletoreachfactthatinthepresenceofhydrogen,graphenesheetsdonot132electron-orhole-dopinglevelsofupto510cm.Thedopingreadilyrollintonanotubes.InthecaseofBG,wecarriedout[5–10]effectsareideallymonitoredbyRamanspectroscopy.
7、Thus,thearcdischargeusinggraphiteelectrodesinthepresencetheG-bandintheRamanspectrumstiffensforbothelectron-andH2þB2H6(BG1)orusingboron-stuffedgraphiteelectrodeshole-doping,andtheratiooftheintensitiesofthe2D-andG-band(BG2).WepreparedNGbycarryingoutt
