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1、SSOOetchinginFluorocarbonplasmaetchinginFluorocarbonplasmai2Copyright2002-2011PEGASUSSoftwareInc.,Allrightsreserved.98SpeciesSpecies■■FlowinparticlesFlowinparticles1)Ions：F（+）、CxFy（+)[sumofCxFy(+)]2)neutrals：F、CxFy[sumofCxFyradicals]■■SolidsandfilmsSolidsandfilms1)Bulk：SiO2、Si2)Resist3)
2、Fluorinationmolecules：SiFz(z=1,2,3)4)Fluorocarbonpolymer5)Polymer-SiO2complex：SiO2CｘFｙ6)Activatedcomplex：SiO2CｘFｙ*Copyright2002-2011PEGASUSSoftwareInc.,Allrightsreserved.99Si/SiOSi/SiO2Surfacereactionmechanism(1)Surfacereactionmechanism(1)I+FCFxCＦxｙCＦxｙCO、COFCO、COFCxＦｙＳｉＦ4PlasmaCO2CFxyp
3、assivationPolymerlayerＳｉＯ２ＣｘＦｙSiO2ＳｉＦzＳｉＯＣＦ*２ｘｙCＦCＦxｙxｙＦPlasmaCxＦｙＳｉＦzCFxypassivationPolymerlayerSiＳｉＦＳｉＦ2ＳｉＦ3Copyright2002-2011PEGASUSSoftwareInc.,Allrightsreserved.100Si/SiOSi/SiO2Surfacereactionmechanism(2)Surfacereactionmechanism(2)SiF/SiFSiSiO23Bulk2I+6I+710F14complexCxFyI+SiOCF*Si
4、F522xy+depositionII+SiOCF10F2xyCFxyetchingF11I+8SiF2C3CF910FxxF,I+ySiF153PolymerF1213Resist10SiFF4CFI+xy14Copyright2002-2011PEGASUSSoftwareInc.,Allrightsreserved.101InitialprofileUnit:[μm]ResistTrenchWidth：0.25,0.333,0.5depth：2.5SiO2AR：10,7.5,5Resistthickness：0.5SiCopyright2002-2011PEGA
5、SUSSoftwareInc.,Allrightsreserved.102SiO2、Polymer、Solid(SiO2+Polymer)120(s)SiOPolymerSolid2240(s)SiO2PolymerSolidCopyright2002-2011PEGASUSSoftwareInc.,Allrightsreserved.103SSetchingbyBoschprocessetchingbyBoschprocessiCopyright2002-2011PEGASUSSoftwareInc.,Allrightsreserved.104DRIEprocess
6、bySF6/C4F8AnisotropicetchEtchcycleDepocycleSiIso/AnisotropicetchPolymeretchPolymerdepoFradicalSFｘ(+)CxFy(+)CxFyradicalSF6C4F8Operatingcond.（Gasflowrateetc.）Time(Etch/depo)Copyright2002-2011PEGASUSSoftwareInc.,Allrightsreserved.105Computationalconditions1）SF/CF8[sec]/8[sec]6482）Incidentf
7、luxes：EtchingstepF,SF(+):1.0x1023,2.0x1022[#/m2/s]xDepostepCF,CF(+):2.0x1022,2.0x1021[#/m2/s]xyxy3）Incidentenergy/angulardistribution：radicals：0.04[eV]マクスウェル分布Ion：Energydist.:Gaussiandist.ofN(90,5)Angulardist.:cos50(θ)Copyright2002-2011PEGASUSSoftwareInc.,Allrightsreserved.106S
