Etching_profile_simulation_of_FLARE.pdf

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1、Etchingprofilesimulationoforganiclow-kfilm(FLARE)inN-HplasmaReferences:1)H.Nagai,etal.,BehaviorofatomicradicalsandtheireffectsonorganiclowdielectricconstantfilmetchinginhighdensityN2/H2andN2/NH3plasmas,J.Appl.Phys.Vol.91,Issue5,2615(2002)2)H.Nagai,etal.,Etchingorgani

2、clowdielectricfilminultrahighfrequencyplasmausingN2/H2andN2/NH3gases,J.Appl.Phys.Vol.94,Issue3,1362(2003)2012/May/71UHFplasma[N/H----(1)N/NH-----(2)]2223FlowrateH-atomratioRadicaldensityRatioofradical[sccm]infedgas(×1019[/m3])densityEtchingrate(%)HNH/(H+N)[nm/min](1)

3、70/30300.61.10.35320(2)50/50502.30.50.824202Ratioofradicaldensity：HighetchrateH/(N+H)=0.82H=1.4E22[/m2/s]N=0.9E21[/m2/s]LowetchrateH/(N+H)=0.35H=3.7E21[/m2/s]N=1.9E21[/m2/s]Vth=√8kT/(πM)H：2500[m/s]Γ=1/4n*VthN:700[m/s]T=313[K]Incidentionflux：2.0E20[#/m2/s]N+,NH+2xy3(g

4、f):gas-inflow,(s):Solidoyfilm,(gr):gas-reactionprodut＜Reactionmodel＞AssumedsimplemodelProb.#No.1N(gf)+FLARE(s)C_N(s)+FLARE0.04#No.2H(gf)+FLARE(s)Prod_1(gr)4.0E-4#No.3I(+)+FLARE(s)Prod_2(gr)0.04(E/Eth-1)1/2(Eth=20[eV])#No.4I(+)+C_N(s)Prod_3(gr)0.04(E/Eth-1)1/2#No.

5、5I(+)+SiO_2(s)I+SiO_2(gr)Nextpage#No.6SiO_2(gr)+SiO_2(s)SiO_2(s)+SiO_2(s)0.9#No.7H(gf)+FLARE(s)1/2H(gr)+FLARE0.012#No.8N(gf)+FLARE(s)1/2N(gr)+FLARE0.012＜Reflectionmodel＞Allofneutralsandionsdependontheprob.innextpage.4#No.5I(+)+SiO_2(s)I+SiO_2(gr)Prob.：0.05・（E0.5

6、–E0.5）・f(θ)thE=50[eV]f(θ)：f(55)=1.0th＜Prob.ofspecularreflection：f＞f=(E/E)(θ-θ)/(90–θ)thcutoffcutoffE=50[eV]θ=60thcutoffProb.ofdiffusivereflection：1.0-f5InitialprofileUnit:[um]0.50.25SiO2FLARE0.5SEMimageinRef[2],Incaseofhighetchrate.6H/(N+H)=0.8210[s]20[s]30[s]40[s]50

7、[s]60[s]70[s]Solid+C-NlayerC-Nlayer7H/(N+H)=0.3510[s]20[s]30[s]40[s]50[s]60[s]70[s]Solid+C-NlayerC-Nlayer8