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页数:17页
时间:2020-05-16
《Wet and Dry Etching湿法和干法刻蚀.ppt》由会员上传分享,免费在线阅读,更多相关内容在工程资料-天天文库。
1、NANO-MASTER,INC.WetandDryEtching湿法和干法刻蚀NANO-MASTER那诺-马斯特中国有限公司吴运祥2017年8月16日NANO-MASTER,INC.各向同性和各向异性Whenamaterialisattackedbyaliquidorvaporetchant,itisremovedisotropically(uniformlyinalldirections)oranisotropicetching(uniformityinverticaldirection).Thedifferencebetweenisotro
2、picetchingandanisotropicetchingisshowninFigure1.Materialremovalrateforwet-etchingisusuallyfasterthantheratesformanydryetchingprocessesandcaneasilybechangedbyvaryingtemperatureortheconcentrationofactivespecies.NANO-MASTER,INC.湿法刻蚀Synonyms:chemicaletching,liquidetching湿法刻蚀定义:W
3、etetchingisamaterialremovalprocessthatusesliquidchemicalsoretchantstoremovematerialsfromawafer.Thespecificpattersaredefinedbymasksonthewafer.Materialsthatarenotprotectedbythemasksareetchedawaybyliquidchemicals.Thesemasksaredepositedandpatternedonthewafersinapriorfabrications
4、tepusinglithography.[2]Awetetchingprocessinvolvesmultiplechemicalreactionsthatconsumetheoriginalreactantsandproducenewreactants.Thewetetchprocesscanbedescribedbythreebasicsteps.(1)NANO-MASTER,INC.湿法刻蚀Diffusionoftheliquidetchanttothestructurethatistoberemoved.(2)Thereactionbe
5、tweentheliquidetchantandthematerialbeingetchedaway.Areduction-oxidation(redox)reactionusuallyoccurs.Thisreactionentailstheoxidationofthematerialthendissolvingtheoxidizedmaterial.(3)Diffusionofthebyproductsinthereactionfromthereactedsurface.各向异性的湿法刻蚀:Liquidetchantsetchcrystal
6、linematerialsatdifferentratesdependinguponwhichcrystalfaceisexposedtotheetchant.Thereisalargedifferenceintheetchratedependingonthesiliconcrystallineplane.NANO-MASTER,INC.湿法刻蚀Inmaterialssuchassilicon,thiseffectcanallowforveryhighanisotropy.Someoftheanisotropicwetetchingagents
7、forsiliconarepotassiumhydroxide(KOH),ethylenediaminepyrocatechol(EDP),ortetramethylammoniumhydroxide(TMAH).Etchinga(100)siliconwaferwouldresultinapyramidshapedetchpitasshowninFigure2a.Theetchedwallwillbeflatandangled.Theangletothesurfaceofthewaferis54.7o.Figure2c-ddepictssca
8、nningelectronmicrographsof(110)-orientedtwo-dimensionalsiliconwallswithmicr
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