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1、WETProcessIntroductionPurposeofWetCleaningProcessThroughtoaseriesofprocessestomakethewafersfreefromparticles,organiccontaminations,metalcontamination,surfacemicroroughnessandnativeoxideusingsomekindsofchemicalsincludingDIW.PurposeofWetCleaningProcessForEtchingprocessOxideremove.Nitrideremove
2、.Photoresist&polymerremove.ForCleaningprocessFreeofparticles.Freeofmetalion.Freeoforganic.Freeofmicro-roughness.Freeofnativeoxide.WetCleaning(Pre-treatment)WetCleaning(Post-treatment)ResistRemovalDiffusionCVDPVDLithographyEtchingDopingWaferInWaferOutICProcessingWetProcess1.FEOLpost-ashclean3
3、5%-typicalSPM.-trendistointegrateresiststripingandcleaning.2.Pre-diffusionclean30%-RCAclean-trendistousedilutechemistriestoreducecost,improveequipmentreliabilityandprocessperformance.3.BEOLpost-etchclean20%-issueswithtechnical,cost,environment-trendistousesinglewaferdryclean4.Others(PostCMPa
4、ndspecialcleaning)15%-SC1basedcleaningChemicalsInvolvedWetbenchPurposeofPre-cleanistoremovethelastunwantedoxidelayerandpreparesurfacefreeofmetalliccontaminantsandgoodPCfornextoxidation.Pre-diffusionclean-RCAcleanSiO2(s)+6HF(l)®H2SiF6(l)+2H2O(l)Theetchrate(orreactionrateofHFwithoxide)canbeslo
5、wedbyaddingmorewaterandlowerstheconcentrationofHF.HFwilletchBPSG>>Oxide>>Nit>>SiH2O:HF100:1(50:1,49%)Function:RemoveOxide(SiO2)Mechanism:ReactswithOxideandformasolvablebyproduct.OxideEtchHFEtchingoffnativeoxideleavinghydrophobicSisurface,repelsH2O,thatispronetoH2OmarkAsamethodtopassivatesurf
6、ace,H2O2/SC1/SC2lastisused.AftercleaningHFonSi,theSiwaferhasH2SiF6=>itischargedupwithSiF62-ions=>thishashighaffinitytoattractdefects,duetostrongpolarity.WhatisH2Omark?ItissomeH2OstainwhichoxidisestheSisurface.ItcanalsobeaconcentrationofH2Ocontaminants.H2Oattractedarea®easytocreateH2Omarkoxox
7、SiwaferWhatistheimpactofwatermark?Watermarkcancauseproblemswithadhesionoffilms,contactresistance,non-uniformitybetweenconductinglayers,blocketch,gateoxidedefects.Howtopreventit?Treatthewafersurfacewitheg.H2O2,SC1,SC2(someoxidationeffects)toensurehy
