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《Chip on Board Development for a Novel MEMS Accelerometer for Seismic Imaging .pdf》由会员上传分享，免费在线阅读，更多相关内容在学术论文-天天文库。
1、ChiponBoardDevelopmentforaNovelMEMSAccelerometerforSeismicImagingZhuqingZhang,JenniferWu,SheldonBernardTechnologyDevelopmentOrganization,IPG,HewlettPackardCompany1000NECircleBlvd,Corvallis,OR97330,USARobertG.WalmsleyHewlett-PackardLaboratories,Hewlett-PackardCompany1501PageMillRd,
2、PaloAlto,CA94304,USAzhuqing.zhang@hp.comlownoisefloor,lowpowerconsumption,smallsize,andAbstractrobustnesstomeettheneedofseismicimaging[2].HPisdevelopingaMEMSaccelerometerthatoffershighThisMEMSsensorusesbothSibulkmicromachiningandsensitivityandlownoiselevelforseismicapplication.Dur
3、ingstandardthinfilmtechnologies,andismadebybondingtwothepackagingprocess,itwasfoundthatthethermalseparatesiliconwafersonwhichelectrodesresidefacingeachmechanicalstressresultedfromtheCTEmismatchbetweenotheracrossasmallgap.Ononeside,rotorelectrodesarethesiliconandthesubstratecandist
4、orttheMEMSstructurearrayedonamovingstructurereferredtoastheproofmassorandalterthedeviceperformance.Afiniteelementmodelwasrotor.Theproofmassconnectstothedieframethroughasetestablishedtounderstandtheeffectofsubstratematerial,diesiliconflexuresdefinedbyaBoschdeepsiliconetch.Facingatt
5、achmaterialandpackagegeometryonthescalefactorandthemovingrotorelectrodesacrossasmallgaparethestatorbiasoffsetoftheMEMS.Themodelpredictedthatceramicorfixedelectrodes.Thegapbetweentherotorandthestatorsubstrateintroducedlessvariationofthesensorperformanceelectrodesisdefinedbywaferbon
6、ding[3].Thescalefactorofovertheoperatingtemperaturerange(-40to70°C)thanthetheaccelerometer(dC/da)isgivenbyFR4substrate.InordertousethelowcostFR4substrate,onecanusedieattachadhesivewithlowmodulusand/orsmalldie(1)attachareatominimizethegapanddisplacement.CeramicpackagesandChiponBoar
7、d(COB)packagesonFR4wheredC/daisdefinedasthecapacitivechangeperunitofsubstratewerebuiltusingvariousdieattachadhesivestoacceleration,dC/dxisthechangeincapacitanceasafunctionvalidatethemodel.TheperformanceoftheMEMSwasofdisplacement,anddx/daisthechangeinpositionwithmeasuredfrom-40to70
8、°C.Resultsshowedthatusingalowacce
