CCP Hydrogen plasma simulation.pdf

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1、CCPHydrogenplasmasimulationModules：PIC-MCCMNMEMCopyright2002-2011PEGASUSSoftwareInc.,Allrightsreserved.15PurposeThesimulationresultandthemeasurementresultinProf.HoriLab.ofNagoyaUniversityofthehydrogenplasmainaorganiclow-Ketchingreactorarecompared.Copyrig

2、ht2002-2011PEGASUSSoftwareInc.,Allrightsreserved.16ComputationalmodelAxialsymmetryV(t)=Vdc+Vrf*sin(2πft)～～PowerelectrodeInsulatorεr=4.5H2inletR167mmW30mmallllMetalInsulatorεr=4.5（Ground）Outlet5PaCopyright2002-2011PEGASUSSoftwareInc.,Allrightsreserved.17C

3、omputationalconditions・Pressure5[Pa]（Fixedatoutlet）・PowerelectrodeVrf=200[V];frequency60[MHz]・Vdc:Automaticallycalculated・Flowrate200[sccm]・SpeciestobeconsideredH-+++-2,H,e,H,H2,H3,H・ReactionsonthewallH1/2H2（Metalsurface15%Insulatorsurface7%）Copyright20

4、02-2011PEGASUSSoftwareInc.,Allrightsreserved.18Numberdensity(electron,ions,Hydrogenatom)+3+3e-density[/m3]Hdensity[/m]H2density[/m]+3-density[/m3]Hdensity[/mH3density[/m]H3]Copyright2002-2011PEGASUSSoftwareInc.,Allrightsreserved.19Electrontemperature,Ele

5、ctricpotential,Gaspressure,Flowvelocity,andHfluxe-temperature[eV]electricpotential[V]gaspressure[Pa]gasvelocity[m/sec]2Hflux[/m/sec]Copyright2002-2011PEGASUSSoftwareInc.,Allrightsreserved.20SimulationresultcomparedwithexperimentquantitySimulation(*)exper

6、imentElectrondensity[/cm3]1.44E101.6E10H+density[/cm3]3.43E8-H2+density[/cm3]3.45E9-H3+density[/cm3]1.07E10-H－density[/cm3]1.29E7-Hdensity[/cm3]1.13E132.0E13Electrontemperature[eV]5.176.8Vdc[V]-112-114（*）Thesearemeanvaluesoverradialdirectionatthecenterof

7、electrodes.Copyright2002-2011PEGASUSSoftwareInc.,Allrightsreserved.21