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1、PROGRESSINPHOTOVOLTAICS:RESEARCHANDAPPLICATIONSProg.Photovolt:Res.Appl.2007;15:613–620Publishedonline8May2007inWileyInterScience(www.interscience.wiley.com)DOI:10.1002/pip.766ResearchSHORTCOMMUNICATIONLaserIsolationofShuntedRegionsinIndustrialSolarCellsM.D.Abbott1*,y,T.Trupke1,H.P.Hartmann2,R
2、.Gupta3andO.Breitenstein31TheUniversityofNewSouthWales,CentreofExcellenceforAdvancedSiliconPhotovoltaicsandPhotonics,Sydney,Australia2DeutscheCellGmbH,BerthelsdorferStrasse111A,09599Freiberg,Germany3MaxPlanckInstituteofMicrostructurePhysics,Halle,GermanyThispaperprovidesproofofconceptforatech
3、niquethatuseslaser-ablatedgroovestolocallyisolateshuntedregionsinindustrialsiliconsolarcells.TheshuntedregionsarelocatedusingphotoluminescenceimagingandthenisolatedfromtheactivecellareawithaNd:YAGlaser.Byapplyingthisshuntisolationtechnique,wedemonstratethatastronglyshunted96%efficientindustri
4、alscreen-printedsolarcellcouldberecoveredto133%.Withfurtherdevelopmentthistechniquecouldbeappliedinanindustrialenvironmenttomitigateyieldlossesandimproveaveragecellefficiencies.Copyright#2007JohnWiley&Sons,Ltd.keywords:laserprocessing;shunt;photoluminescence;lock-inthermographyReceived31Janua
5、ry2007;Revised21March2007INTRODUCTIONfficiencylossduetoregionsoflowshuntresistanceisoneofthemajorchallengescurrentlyfacingPVmanufacturers.Shuntedcellssignificantlyreduceaverageefficiencies,resultinmoduleswithpoorlowElightperformanceandreducethetotalyield.Thisproblemisparticularlypronouncedincell
6、sfabricated1oncheaperformsofsiliconwherematerialinduceddefectspresentmanydifferentsourcesofshuntingandisthereforeexpectedtobecomeworseinthefuturegiventhecurrentshortageinsiliconfeedstock.Inmanycases,thesourceoflowshuntresistanceishighlylocalized,oneexampleisconductiveSiCinclusionswhichare2typ
7、icallyonly5–10mminsize.Althoughtheshuntedregionitselfishighlylocalized,thelateralconductivepathformedbytheemitterandbymetalcontactsgenerallycausesmuchlargerareasofthesolarcelltobeaffected.Thispaperpresentsatechniquetomitigatetheinfluenceofloca
