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1、Chapter11NanoparticlesinMicroviasRabindraN.Das(*ü)andFrankD.Egitto11.1IntroductionElectronicpackagingprovidesformountingandphysicalsupportofelectroniccomponents,removalofheatfromdevices(e.g.,integratedcircuitchips),protec-tionofdevicesfromtheenvironment,andelectricalinterconnectionofcomponen
2、ts.Thiselectricalinterconnectionenablesdistributionofbothelectronicsignalsandpowerthroughoutthepackagebymeansofmultiplelayersofmetalcircuittraces.Electricalinterconnectionbetweenlayers(vertically)istypicallymadewithdrilledandplatedholes.Thedemandforhigh-performance,lightweight,portablecomput
3、ingpowerisdrivingthemicroelectronicsindustrytowardminiaturizationofmanyelectronicproductsandthecomponentsthatcomprisethem[1].GreaterI/OdensityofICchipsandmoredemandingperformancerequirementsnecessitategreaterwiringdensityandaconcomitantreductioninfeaturesizesforelectronicpackages.Toincorpora
4、teagreaterdegreeofelectronicfunctionintoasmallervolume,circuittracesandtheholesusedtoconnectthemmusthavesmallerphysicaldimensions[26].Thetermmicroviahasbeencoinedtodescribesmallholesusedforlayer-to-layerelectricalinterconnection.Somewhatarbitrarily,theyaregenerallyacceptedtohavediametersinth
5、eorderof150µm,orsmaller.Today,thehighendofthesemiconductormarketappearstobestandardApplication-SpecificIntegratedCircuits(ASICs),structuredASICs,andField-ProgrammableGateArrays(FPGAs).Thesedevicescontinuetoneedanincreasingnumberofsignal,power,andgrounddiepads.Acorrespondingdecreaseinpadpitch
6、isrequiredtomaintainreasonablediesizes.Thecombinationofthesetwoneedsispushingcomplexsemiconductorpackagingdesigns.Thispackagingchal-lengeisespeciallycriticalinflipchipballgridarray(BGA)packageswheretheneedfordensityhastocoexistwithgoodelectrical,thermal,andreliabilityper-formance.Migrationfr
7、omwirebondtoflipchippackageshasbeendrivenbytheR.N.DasEndicottInterconnectTechnologies,Inc.,Endicott,NY,USAJ.E.Morris(ed.)Nanopackaging:NanotechnologiesandElectronicsPackaging,209DOI:10.1007/978-0-387-47326-0_11,©SpringerScience+BusinessMedia,LLC200
