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1、MRSInternetJournalNitrideSemiconductorResearchHigh-SpeedVisible-BlindResonantCavityEnhancedAlGaNSchottkyPhotodiodesNecmiBiyikli1,TolgaKartaloglu1,OrhanAytur1,IbrahimKimukin2andEkmelOzbay21BilkentUniversityDept.ofElectricalandElectronicsEngineering,2BilkentUniversityDept.ofPh
2、ysics,(ReceivedFriday,September19,2003;acceptedThursday,October30,2003)Wehavedesigned,fabricatedandtestedresonantcavityenhancedvisible-blindAlGaN-basedSchottkyphotodiodes.Thebottommirroroftheresonantcavitywasformedwitha20pairAlN/Al0.2Ga0.8NBraggmirror.Thedeviceswerefabricate
3、dusingamicrowavecompatiblefabricationprocess.Auandindium-tin-oxide(ITO)thinfilmswereusedforSchottkycontactformation.ITOandAu-Schottkydevicesexhibitedresonantpeakswith0.153A/Wand0.046A/Wresponsivityvaluesat337nmand350nmrespectively.Temporalhigh-speedmeasurementsat357nmresulted
4、infastpulseresponseswithpulsewidthsasshortas77ps.ThefastestUVdetectorhada3-dBbandwidthof780MHz.1Introductiondeviceswerefabricatedandcomparedintermsofdetec-torperformance.Apeakresponsivityof0.153A/WatSolar/visible-blinddetectionisvitalforanumberof337nmanda3-dBbandwidthof780MH
5、zwerecriticalapplicationsincludingmissileplumedetection,obtainedwithITOandAu-SchottkyRCE-PDsrespec-flame/enginemonitoring,chemical/biologicalagenttively.sensing,andcovertspace-to-spacecommunications[1].Withitswidebandgapandintrinsicvisible-blind2Experimentalabsorptionspectrum
6、,AlxGa1-xNternaryalloyisthemostpromisingmaterialsystemforhigh-performance2.1EpitaxialDesignsolar/visible-blindphotodetectors[2].High-perfor-ForthedesignoftheRCE-PDstructure,atransfer-manceultraviolet(UV)detectorswerereportedusingmatrix-method(TMM)basedsimulationprogramwasAlG
7、aN-basedSchottky[3][4][5][6],MSM[7][8]used.Thedetectorwasdesignedtoachievearesonant[9],pin[10],[11],andavalanchetypeofphotodiodesenhancementaround350nm.Thespectralcomplex(PDs)[12].Thesedevicesconsistedofconventional,refractiveindexdataofAlxGa1-xNneededforthesimu-single-passd
8、etectorstructures.Ontheotherhand,reso-lationswereobtainedfromRef.18.Figure1
